公开(公告)号：US20030194863A1

公开(公告)日：2003-10-16

申请号：US10421174

申请日：2003-04-22

申请人： APPLIED MATERIALS, INC.

发明人： Peijun Ding ,  Imran Hashim ,  Barry Chin ,  Bingxi Sun

IPC分类号： H01L021/4763 ,  H01L021/44

CPC分类号： H01L21/76876 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882

摘要： A method and apparatus for Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.

摘要翻译： 提供用于金属化处理序列的方法和装置，用于形成包括线，通孔和触点的可靠互连。 首先在图案化衬底上形成初始阻挡层，例如Ta或TaN，接着使用高密度等离子体PVD技术形成晶种层。 然后使用1）电镀，2）PVD回流，3）CVD，然后PVD回流或4）CVD来填充该结构。

公开(公告)号：US20030116427A1

公开(公告)日：2003-06-26

申请号：US10202778

申请日：2002-07-25

申请人： Applied Materials, Inc.

发明人： Peijun Ding ,  Zheng Xu ,  Roderick C. Mosely ,  Suraj Rengarajan ,  Nirmalya Maity ,  Daniel A. Carl ,  Barry Chin ,  Paul F. Smith ,  Darryl Angelo ,  Anish Tolia ,  Jianming Fu ,  Fusen Chen ,  Praburam Gopalraja ,  Xianmin Tang ,  John C. Forster

IPC分类号： C23C014/32 ,  C23C014/34

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在同一个房间。 此外，底部覆盖可以通过ICP再溅射而变薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。

公开(公告)号：US20030017628A1

公开(公告)日：2003-01-23

申请号：US09908829

申请日：2001-07-18

申请人： Applied Materials, Inc.

发明人： Haojiang Li ,  Peijun Ding ,  Suraj Rengarajan

IPC分类号： H01L021/66 ,  G01R031/26

CPC分类号： H01L21/67253 ,  G01N27/041 ,  H01L22/20 ,  Y10S438/934

摘要： Generally, a method for monitoring a process of removing native oxides from an at least partially exposed layer disposed on a substrate is provided. In one embodiment, a method for monitoring includes disposing the substrate in a process chamber, exposing the at least partially exposed layer to a reactive pre-clean process, removing the substrate from the process chamber and measuring a sheet resistance of the exposed layer. In another embodiment, a method includes disposing the substrate in a process chamber, exposing the at least partially exposed conductive layer to a reactive pre-clean process that comprises an oxide reduction step, removing the substrate from the process chamber, contacting the conductive layer with one or more contact members, measuring a sheet resistance of the exposed conductive layer between the contact members, and comparing the measured resistance to a known value.

公开(公告)号：US20020132473A1

公开(公告)日：2002-09-19

申请号：US09805865

申请日：2001-03-13

申请人： Applied Materials ,Inc.

发明人： Tony Chiang ,  Peijun Ding ,  Barry Chin

IPC分类号： H01L021/4763

CPC分类号： H01L21/76855 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843

摘要： A method for forming an integrated barrier layer structure that is compatible with copper (Cu) metallization schemes for integrated circuit fabrication is disclosed. In one aspect, an integrated circuit is metallized by forming an integrated barrier layer structure on a silicon substrate followed by deposition of one or more copper (Cu) layers. The integrated barrier layer structure includes one or more barrier layers selected from tantalum (Ta), tantalum nitride (TaNx), tungsten (W), and tungsten nitride (WNx) conformably deposited on the silicon substrate. After the one or more barrier layers are deposited on the silicon substrate, the silicon substrate is heated to form a silicide layer at the interface between the silicon substrate and the barrier layers.

摘要翻译： 公开了一种形成与用于集成电路制造的铜（Cu）金属化方案兼容的集成阻挡层结构的方法。 在一个方面中，通过在硅衬底上形成集成的阻挡层结构，然后沉积一个或多个铜（Cu）层，从而对集成电路进行金属化。 集成阻挡层结构包括从硅（Ta），氮化钽（TaNx），钨（W）和氮化钨（WNx）中选择的一个或多个势垒层，其顺应地沉积在硅衬底上。 在一个或多个阻挡层沉积在硅衬底上之后，硅衬底被加热以在硅衬底和阻挡层之间的界面处形成硅化物层。

公开(公告)号：US20030217914A1

公开(公告)日：2003-11-27

申请号：US10418710

申请日：2003-04-17

申请人： Applied Materials, Inc.

发明人： Michael Andrew Miller ,  James H. Tsung ,  Daniel C. Lubben ,  Ilyoung Richard Hong ,  Peijun Ding

IPC分类号： C23C014/35

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

摘要翻译： 小型不平衡磁体组件以逆行星行星或行星路径围绕目标物的背面进行扫描，等离子体溅射包括围绕目标的中心轴线的轨道旋转和围绕围绕目标中心轴线旋转的另一轴线的行星旋转。 磁体组件可以穿过目标中心，从而允许完全的目标覆盖。 齿轮行星机构可以包括旋转驱动板，固定中心齿轮和惰轮以及可旋转地支撑在驱动板中的从动齿轮，该驱动板支撑在与驱动板对置的驱动板侧的悬臂磁体组件。 可以通过改变通过旋转周期的旋转速率或通过调节目标功率来控制侵蚀曲线。 可以添加第二行星级或使用非圆形齿轮。 辅助电磁线圈可产生聚焦磁场。

公开(公告)号：US20030217913A1

公开(公告)日：2003-11-27

申请号：US10152494

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC.

发明人： Ilyoung Richard Hong ,  James Tsung ,  Daniel Clarence Lubben ,  Peijun Ding ,  Nirmalya Maity

IPC分类号： C23C014/35

CPC分类号： H01J37/3455 ,  C23C14/345 ,  C23C14/35 ,  C23C14/355 ,  H01J37/3405 ,  H01J37/3408

摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

摘要翻译： 小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。 磁铁组件通过目标中心，从而允许全目标覆盖。 相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。 齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。 带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。

公开(公告)号：US20010005629A1

公开(公告)日：2001-06-28

申请号：US09784709

申请日：2001-02-14

申请人： Applied Materials Inc.

发明人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

IPC分类号： H01L021/44

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76877

摘要： The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

公开(公告)号：US20040055880A1

公开(公告)日：2004-03-25

申请号：US10608306

申请日：2003-06-26

申请人： APPLIED MATERIALS, INC.

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C014/34

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

摘要翻译： 本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。 因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。 当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。 本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。 屏蔽可用于支持RF线圈。

公开(公告)号：US20030089597A1

公开(公告)日：2003-05-15

申请号：US10246316

申请日：2002-09-17

申请人： APPLIED MATERIALS, INC.

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Peijun Ding

IPC分类号： C23C014/14 ,  C23C014/34

CPC分类号： H01L21/2855 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： We have discovered a method of providing a thin approximately from about 20 null to about 100 null thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 nullnullcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供约20至约100个厚的TaN籽晶薄层的方法，当钽沉积在TaN种子层上时，可以用它来诱导形成α钽。 此外，TaN籽晶层的电阻率低于30μΩ·cm，可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，TaN膜在其表面上改变形成TaN种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成TaN籽晶层

公开(公告)号：US20020142589A1

公开(公告)日：2002-10-03

申请号：US09775356

申请日：2001-01-31

申请人： Applied Materials, Inc.

发明人： Arvind Sundarrajan ,  Suraj Rengarajan ,  Michael A. Miller ,  Peijun Ding ,  Gongda Yao ,  Christophe Marcadal ,  Ling Chen

IPC分类号： H01L021/44

CPC分类号： H01L21/76846 ,  C23C14/024 ,  C23C14/16 ,  C23C16/34 ,  H01L21/2855 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided herein is a method of depositing alpha-tantalum film on a semiconductor wafer by depositing a tantalum nitride film on a wafer; and then depositing a tantalum film over the tantalum nitride film using wafer bias. The tantalum film as deposited is in alpha phase. Also provided is a method of depositing Cu barrier and seed layer on a semiconductor wafer, comprising the steps of depositing a tantalum nitride layer on a wafer; depositing a tantalum layer over the tantalum nitride layer using wafer bias, wherein the resulting tantalum barrier layer is in alpha phase; and then depositing Cu seed layer over the alpha-tantalum barrier layer. Further provided is a method of depositing alpha-tantalum film/layer using two-chamber process, wherein the tantalum nitride and subsequently deposited tantalum films/layers can be deposited in two separate chambers, such as IMP or SIP chambers. Still further provided is a method of depositing alpha-tantalum film by depositing PVD tantalum film on CVD films.

摘要翻译： 本文提供了一种通过在晶片上沉积氮化钽膜在半导体晶片上沉积α-钽膜的方法; 然后使用晶片偏压在钽氮化物膜上沉积钽膜。 沉积的钽膜是α相。 还提供了一种在半导体晶片上沉积Cu势垒和种子层的方法，包括以下步骤：在晶片上沉积氮化钽层; 使用晶片偏置在钽氮化物层上沉积钽层，其中所得的钽阻挡层是α相; 然后在α-钽阻挡层上沉积Cu籽晶层。 进一步提供了一种使用二室工艺沉积α-钽膜/层的方法，其中氮化钽和随后沉积的钽膜/层可以沉积在两个分离的室中，例如IMP或SIP室。 还提供了通过在CVD膜上沉积PVD钽膜来沉积α-钽膜的方法。