公开(公告)号：US20040219789A1

公开(公告)日：2004-11-04

申请号：US10778898

申请日：2004-02-12

申请人： Applied Materials, Inc.

发明人： Bingxi Sun Wood ,  Mark N. Kawaguchi ,  James S. Papanu ,  Roderick C. Mosely ,  Chiukin Steven Lai ,  Chien-Teh Kao ,  Hua Ai ,  Wei W. Wang

IPC分类号： H01L021/302 ,  H01L021/461

CPC分类号： H01L21/67069 ,  C23C14/022 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32871 ,  H01J37/34 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/76814 ,  H01L21/76838

摘要： A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

摘要翻译： 基板清洁装置具有远程源，以远程激励含氢气体以形成具有离子含氢物质与自由基含氢物质的第一比例的通电气体。 该设备具有带有基板支撑件的处理室，用于过滤远程激励的气体以形成具有离子含氢物质与含氢的物质的第二比例的过滤的通电气体的离子过滤器，第二比例不同于 第一比例和气体分配器，以将过滤的通电气体引入室中。

公开(公告)号：US20030116427A1

公开(公告)日：2003-06-26

申请号：US10202778

申请日：2002-07-25

申请人： Applied Materials, Inc.

发明人： Peijun Ding ,  Zheng Xu ,  Roderick C. Mosely ,  Suraj Rengarajan ,  Nirmalya Maity ,  Daniel A. Carl ,  Barry Chin ,  Paul F. Smith ,  Darryl Angelo ,  Anish Tolia ,  Jianming Fu ,  Fusen Chen ,  Praburam Gopalraja ,  Xianmin Tang ,  John C. Forster

IPC分类号： C23C014/32 ,  C23C014/34

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在同一个房间。 此外，底部覆盖可以通过ICP再溅射而变薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。

公开(公告)号：US20020168468A1

公开(公告)日：2002-11-14

申请号：US10124575

申请日：2002-04-16

申请人： Applied Materials, Inc.

发明人： Jing-Pei Chou ,  Chien-Teh Kao ,  Chiukin Lai ,  Roderick C. Mosely ,  Mei Chang

IPC分类号： C23C016/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

摘要： A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.

摘要翻译： 在所述基板上形成硅化钛氮化物（TiSiN）层的方法。 通过向处理室提供衬底并用含硅气体处理衬底来形成硅化钛氮化物（TiSiN）层。 在经处理​​的基底上形成氮化钛层并暴露于含硅气体。 氮化钛（TiN）层与含硅气体反应形成硅化钛（TiSiN）层。 钛硅化钛（TiSiN）层的形成与集成电路制造工艺兼容。 在一个集成电路制造工艺中，硅化钛氮化物（TiSiN）层可以用作钨（W）金属化工艺的扩散阻挡层。

公开(公告)号：US20010025205A1

公开(公告)日：2001-09-27

申请号：US09737681

申请日：2000-12-15

申请人： Applied Materials, Inc.

发明人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

IPC分类号： H01L021/44 ,  G06F019/00 ,  H01L021/28

CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.