发明申请
- 专利标题： Process for producing low defect density silicon
- 专利标题（中）： 低缺陷密度硅生产工艺
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申请号： US10685251申请日： 2003-10-14
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公开(公告)号： US20040089224A1公开(公告)日： 2004-05-13
- 发明人: Robert J. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
- 申请人： MEMC Electronic Materials, Inc.
- 申请人地址： null
- 专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人地址： null
- 主分类号： C30B015/00
- IPC分类号： C30B015/00 ; C30B021/06 ; C30B027/02 ; C30B028/10 ; C30B030/04
摘要：
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof.
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