公开(公告)号：US09272442B2

公开(公告)日：2016-03-01

申请号：US13731219

申请日：2012-12-31

申请人： MEMC Electronic Materials, Inc.

发明人： Dusan Krulj ,  John Michael Pogany

IPC分类号： B23Q7/00 ,  B23Q17/00 ,  B28D5/00 ,  B24B5/50

CPC分类号： B28D5/0058 ,  B24B5/50 ,  Y10T29/49998

摘要： A method of aligning an ingot of semiconductor or solar-grade material with a mounting block includes supporting the ingot using adjustable supports, aligning a predetermined centerline of the ingot with a reference line using a laser, and attaching the mounting block to the ingot such that the predetermined centerline remains aligned with the reference line.

摘要翻译： 将半导体或太阳能级材料的锭与安装块对准的方法包括使用可调节支撑件支撑锭，使用激光将锭的预定中心线与参考线对准，并将安装块附接到锭，使得 预定的中心线保持与参考线对准。

公开(公告)号：US09156187B2

公开(公告)日：2015-10-13

申请号：US13724050

申请日：2012-12-21

申请人： MEMC Electronic Materials, Inc.

发明人： Sumeet S. Bhagavat ,  Carlo Zavattari ,  Yunbiao Xin ,  Roland R. Vandamme

IPC分类号： B28D1/10 ,  B28D5/04 ,  B28D5/00

CPC分类号： B28D1/10 ,  B28D5/0082 ,  B28D5/045

摘要： Methods are disclosed for determining mounting locations of ingots on a wire saw machine. The methods include measuring a test surface of a test wafer previously sliced by the wire saw machine from a test ingot to calibrate the system. A magnitude and a direction of an irregularity of the measured test surface of the test wafer is then determined. The mounting location is then determined for another ingot to be mounted on the ingot holder based on at least one of the magnitude and direction of the irregularity of the measured test surface of the test wafer.

摘要翻译： 公开了用于确定锭子在线锯机上的安装位置的方法。 这些方法包括测量由线锯机先前由测试锭切割的测试晶片的测试表面，以校准系统。 然后确定测试晶片测量的测试表面的不规则的大小和方向。 然后根据测试晶片测得的测试表面的不规则的大小和方向中的至少一个来确定安装位置，以便另一个锭被安装在锭架上。

公开(公告)号：US20140273410A1

公开(公告)日：2014-09-18

申请号：US13829021

申请日：2013-03-14

申请人： MEMC Electronic Materials, Inc.

发明人： Arash Abedijaberi ,  John Allen Pitney ,  Shawn Thomas

IPC分类号： H01L21/02 ,  C23C16/455

CPC分类号： H01L21/02532 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45561 ,  C23C16/45578 ,  H01L21/0262

摘要： A system for depositing a layer on a substrate includes a processing chamber, a gas injecting port for introducing gas into the system, a gas distribution plate disposed between the gas injecting port and the processing chamber, the gas distribution plate including holes therein, and an inject insert liner assembly received within the system adjacent to the gas distribution plate and upstream from the processing chamber. The inject insert liner assembly defines gas flow channels therein extending along a lengthwise direction of the system, wherein each channel includes an inlet and an outlet, and at least one channel is tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction. The inject insert liner assembly has the same number of gas flow channels as the number of holes in the gas distribution plate.

摘要翻译： 用于在基板上沉积层的系统包括处理室，用于将气体引入到系统中的气体注入口，设置在气体注入口和处理室之间的气体分配板，其中包括孔的气体分配板和 将插入衬垫组件接收在邻近气体分配板并在处理室上游的系统内。 注射衬垫组件限定沿着系统的长度方向延伸的气体流动通道，其中每个通道包括入口和出口，并且至少一个通道沿着系统的长度方向在垂直方向 或水平方向。 注射衬垫组件具有与气体分配板中的孔数相同数量的气体流动通道。

公开(公告)号：US20140224175A1

公开(公告)日：2014-08-14

申请号：US13767393

申请日：2013-02-14

申请人： MEMC ELECTRONIC MATERIALS, INC.

发明人： Arash Abedijaberi

IPC分类号： C23C16/455 ,  B23P11/00

CPC分类号： C23C16/4401 ,  C23C16/4409 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4586 ,  C23C16/52 ,  Y10T29/49826 ,  Y10T137/87249

摘要： A gas distribution manifold for a chemical vapor deposition reactor includes a first gas distribution zone including a central gas port located in a central portion of the manifold. The manifold also includes a second gas distribution zone including at least two intermediate ports adjacent the central gas port. The manifold further includes a third gas distribution zone including at least two outer ports, each one of the outer ports spaced from the central gas port by one of the intermediate ports. The gas distribution manifold includes a fourth gas distribution zone comprising at least two edge ports, each edge port being spaced from the central outlet port by at least one of the intermediate and outer ports.

摘要翻译： 用于化学气相沉积反应器的气体分配歧管包括第一气体分配区，其包括位于歧管中心部分的中心气体口。 歧管还包括第二气体分配区，其包括邻近中心气体端口的至少两个中间端口。 歧管还包括包括至少两个外部端口的第三气体分配区域，每个外部端口中间气体端口中的一个通过其中一个中间端口间隔开。 气体分配歧管包括包括至少两个边缘端口的第四气体分配区，每个边缘端口通过中间和外部端口中的至少一个与中心出口端口间隔开。

公开(公告)号：US20140182115A1

公开(公告)日：2014-07-03

申请号：US13731219

申请日：2012-12-31

申请人： MEMC ELECTRONIC MATERIALS, INC.

发明人： Dusan Krulj ,  John Michael Pogany

IPC分类号： B24B1/00

CPC分类号： B28D5/0058 ,  B24B5/50 ,  Y10T29/49998

摘要： A method of aligning an ingot of semiconductor or solar-grade material with a mounting block includes supporting the ingot using adjustable supports, aligning a predetermined centerline of the ingot with a reference line using a laser, and attaching the mounting block to the ingot such that the predetermined centerline remains aligned with the reference line.

摘要翻译： 将半导体或太阳能级材料的锭与安装块对准的方法包括使用可调节支撑件支撑锭，使用激光将锭的预定中心线与参考线对准，并将安装块附接到锭，使得 预定的中心线保持与参考线对准。

公开(公告)号：US20130276695A1

公开(公告)日：2013-10-24

申请号：US13838284

申请日：2013-03-15

申请人： MEMC ELECTRONIC MATERIALS, INC.

发明人： John Allen Pitney ,  Manabu Hamano

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  H01L21/68785

摘要： Apparatus and methods for wafer processes such as etching and chemical vapor deposition processes are disclosed. In some embodiments, the apparatus includes a susceptor and a ring disposed beneath the susceptor to influence a thickness of the deposited epitaxial layer.

摘要翻译： 公开了诸如蚀刻和化学气相沉积工艺的晶片工艺的装置和方法。 在一些实施例中，该设备包括基座和设置在基座下方的环，以影响沉积的外延层的厚度。

公开(公告)号：US20130195432A1

公开(公告)日：2013-08-01

申请号：US13828725

申请日：2013-03-14

申请人： MEMC ELECTRONIC MATERIALS, INC.

发明人： Abarajith Hari ,  Zhihui Gu ,  Satish Bhusarapu ,  Timothy Truong ,  Puneet Gupta

IPC分类号： F22B1/28

CPC分类号： F22B1/288 ,  C01B33/1071 ,  F28D15/00 ,  F28F13/003

摘要： A heat exchanger for vaporizing a liquid and a method of using the same are disclosed. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid.

摘要翻译： 公开了一种用于蒸发液体的热交换器及其使用方法。 热交换器包括壳体，管，加热器和多个非反应构件。 管设置在壳体的内部并具有入口和出口。 加热器被配置为加热管。 多个非反应性构件以这样的布置布置在管的内部空腔中，使得在构件和管之间限定多个空隙。 该布置还允许液体通过空隙并且从管的入口行进到管的出口。 当液体通过多个空隙以便使液体蒸发时，多个非反应性构件和管将液体转移到液体中。

公开(公告)号：US20130137241A1

公开(公告)日：2013-05-30

申请号：US13730011

申请日：2012-12-28

申请人： MEMC Electronic Materials, Inc.

发明人： Dale A. Witte ,  Jeffrey L. Libbert

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/76254 ,  Y10T428/24174

摘要： This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.

摘要翻译： 本发明一般涉及制造多层晶体结构的方法。 该方法包括将离子注入供体结构中，将注入的供体结构键合到第二结构以形成结合结构，切割结合的结构，以及从最终的多层晶体结构去除供体结构的任何残留部分。

公开(公告)号：US20040089224A1

公开(公告)日：2004-05-13

申请号：US10685251

申请日：2003-10-14

申请人： MEMC Electronic Materials, Inc.

发明人： Robert J. Falster ,  Joseph C. Holzer ,  Steve A. Markgraf ,  Paolo Mutti ,  Seamus A. McQuaid ,  Bayard K. Johnson

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B33/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T428/21

摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof.

摘要翻译： 本发明涉及晶锭或晶片形式的单晶硅，其包含不具有附聚固有点缺陷的轴对称区域及其制备方法。

公开(公告)号：US20040038544A1

公开(公告)日：2004-02-26

申请号：US10420557

申请日：2003-04-22

申请人： MEMC Electronic Materials, Inc.

发明人： Guoqiang (David) Zhang ,  Henry Frank Erk ,  Tracy M. Ragan ,  Julie A. Kearns

IPC分类号： H01L021/302 ,  H01L021/461

CPC分类号： B24B37/08 ,  H01L21/302 ,  H01L21/30625

摘要： A method for polishing front and back surfaces of a semiconductor wafer includes the step of providing a polishing apparatus having a wafer carrier generally disposed between a first polishing pad and a second polishing pad. The first pad has a hardness significantly greater than a hardness of the second pad. The wafer is placed in the wafer carrier so that the front surface faces the first pad and so that the back surface faces the second pad. A polishing slurry is applied to at least one of the pads and the carrier, first pad and second pad are rotated. The front surface is brought into contact with the first pad and the back surface is brought into contact with the second pad for polishing the front and back surfaces of the wafer whereby less wafer material is removed from the back surface engaged by the second pad and the back surface has less gloss than the front surface after polishing so that the front surface and back surface are visually distinguishable.

摘要翻译： 一种用于抛光半导体晶片的前表面和后表面的方法包括提供具有通常设置在第一抛光垫和第二抛光垫之间的晶片载体的抛光装置的步骤。 第一垫具有显着大于第二垫的硬度的硬度。 将晶片放置在晶片载体中，使得前表面面向第一焊盘并且使得后表面面向第二焊盘。 将抛光浆料施加到至少一个焊盘和载体，第一焊盘和第二焊盘旋转。 前表面与第一焊盘接触，并且后表面与第二焊盘接触，用于抛光晶片的前表面和后表面，从而从与第二焊盘接合的后表面去除较少的晶片材料，并且 后表面在抛光后具有比前表面更少的光泽，使得前表面和后表面在视觉上可区分。