发明申请
- 专利标题： Copper recess process with application to selective capping and electroless plating
- 专利标题（中）： 铜凹槽工艺，适用于选择性封盖和无电镀
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申请号： US10319967申请日： 2002-12-16
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公开(公告)号： US20040113279A1公开(公告)日： 2004-06-17
- 发明人: Shyng-Tsong Chen , Timothy J. Dalton , Kenneth M. Davis , Chao-Kun Hu , Fen F. Jamin , Steffen K. Kaldor , Mahadevaiyer Krishnan , Kaushik Kumar , Michael F. Lofaro , Sandra G. Malhotra , Chandrasekhar Narayan , David L. Rath , Judith M. Rubino , Katherine L. Saenger , Andrew H. Simon , Sean P.E. Smith , Wei-tsu Tseng
- 申请人： International Business Machines Corporation
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L023/48
- IPC分类号： H01L023/48 ; H01L023/52 ; H01L021/4763
摘要：
An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.
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