Invention Application
US20040229552A1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
有权
用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
- Patent Title: Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
- Patent Title (中): 用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
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Application No.: US10855276Application Date: 2004-05-27
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Publication No.: US20040229552A1Publication Date: 2004-11-18
- Inventor: Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
- Applicant: Cabot Microelectronics Corporation
- Applicant Address: IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: IL Aurora
- Main IPC: B24B001/00
- IPC: B24B001/00
Abstract:
The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
Public/Granted literature
- US07306637B2 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP Public/Granted day:2007-12-11
Information query
