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公开(公告)号：US20030082998A1
公开(公告)日：2003-05-01
申请号：US10044174
申请日：2002-01-11
发明人： Phillip Carter , Gregory H. Bogush , Francesco M. De Rege , Jeffrey P. Chamberlain , David J. Schroeder , Brian L. Mueller
IPC分类号： B24B001/00
CPC分类号： C09G1/02 , C09K3/1463 , C09K3/1472
摘要： The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.
摘要翻译： 本发明提供了一种抛光系统，其包括（a）液体载体，（b）碱金属离子，（c）包含胺基和至少一个极性部分的化合物，其中极性部分含有至少一个氧原子，和 （d）抛光垫和/或研磨剂，其中系统的总离子浓度高于临界凝结浓度。 本发明还提供了一种平面化或抛光复合衬底的方法，包括使衬底与上述抛光系统或抛光系统接触，所述抛光系统或抛光系统包括（a）液体载体，（b）碱金属离子，（c） 胺基团和至少一个极性部分，其中极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，并且在约6小时或更少的时间内在约6小时或更少的时间内研磨至少一部分基材 准备抛光系统。
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公开(公告)号：US20030228763A1
公开(公告)日：2003-12-11
申请号：US10269864
申请日：2002-10-11
发明人： David J. Schroeder , Kevin J. Moeggenborg , Homer Chou , Jeffrey P. Chamberlain , Joseph D. Hawkins , Phillip Carter
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.
摘要翻译： 本发明提供抛光衬底的方法，其包括（i）使包含铜的至少一个金属层与化学机械抛光（CMP）系统接触的衬底和（ii）研磨包含铜的至少一部分金属以抛光 底物。 CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，（c）氧化金属层的方法，（d）有机酸，（e）缓蚀剂，和（f）液体载体 。 本发明还提供一种抛光包括第一金属层和第二不同金属层的基板的两步法。 第一金属层用包括研磨剂和液体载体的第一CMP系统抛光，并且第二金属层用包括（a）研磨剂，（b）两亲性非离子表面活性剂的第二CMP系统抛光，和（c） 液体载体。
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公开(公告)号：US20030124959A1
公开(公告)日：2003-07-03
申请号：US10246280
申请日：2002-09-18
IPC分类号： B24B001/00
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.
摘要翻译： 本发明提供了一种抛光包含铜的金属层的衬底的方法。 该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与爆破系统接触，和（iii ）研磨衬底的至少一部分以抛光衬底的金属层。 带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为约20,000g / mol或更高，并且涂覆至少一部分 研磨剂使得研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。
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4.发明申请Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP公开(公告)号：US20040229552A1
公开(公告)日：2004-11-18
申请号：US10855276
申请日：2004-05-27
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： B24B001/00
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译： 本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或 其中磨料包含与带正电荷的聚电解质静电相关的颗粒。
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公开(公告)号：US20030228762A1
公开(公告)日：2003-12-11
申请号：US10165100
申请日：2002-06-07
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02126 , H01L21/31053 , H01L21/312
摘要： The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供了一种抛光含有低k电介质层的衬底的方法，包括（i）使衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）研磨剂，抛光垫或其组合，（b） 两亲性非离子表面活性剂，和（c）液体载体，和（ii）研磨至少一部分基材以抛光基材。
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