公开(公告)号：US20030124959A1

公开(公告)日：2003-07-03

申请号：US10246280

申请日：2002-09-18

Applicant: Cabot Microelectronics Corporation

Inventor： David J. Schroeder ,  Phillip Carter ,  Jeffrey P. Chamberlain ,  Kyle Miller ,  Isaac K. Cherian

IPC: B24B001/00

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.

Abstract translation: 本发明提供了一种抛光包含铜的金属层的衬底的方法。 该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与爆破系统接触，和（iii ）研磨衬底的至少一部分以抛光衬底的金属层。 带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为约20,000g / mol或更高，并且涂覆至少一部分 研磨剂使得研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。

公开(公告)号：US20030100244A1

公开(公告)日：2003-05-29

申请号：US09995025

申请日：2001-11-27

Applicant: Cabot Microelectronics Corporation

Inventor： Isaac K. Cherian ,  Sriram P. Anjur ,  Steven K. Grumbine

IPC: B24B001/00

CPC classification number: B24B37/24 ,  B24D3/32

Abstract: The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.

Abstract translation: 本发明提供了一种包括复合颗粒的抛光垫，其包括由聚合物壳材料包封的固体芯，其中所述固体芯包括与所述聚合物壳材料不同的材料，以及用这种抛光垫抛光基材的方法 。

公开(公告)号：US20030153184A1

公开(公告)日：2003-08-14

申请号：US10353512

申请日：2003-01-29

Applicant: Cabot Microelectronics Corporation

Inventor： Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and (v) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith. Moreover, the invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (a) contacting the first metal layer with the system, and (b) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate. Moreover, the present invention provides a composition for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, to be used with (v) a polishing pad and/or an abrasive.

公开(公告)号：US20030139116A1

公开(公告)日：2003-07-24

申请号：US10051241

申请日：2002-01-18

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin J. Moeggenborg ,  Isaac K. Cherian ,  Vlasta Brusic

IPC: B24B007/22

CPC classification number: C09G1/02

Abstract: The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

Abstract translation: 本发明提供了一种化学机械抛光系统和方法，其包括液体载体，抛光垫和/或研磨剂和至少一种含胺聚合物，其中含胺聚合物具有约5个或更多个顺序的原子分离氮 是具有至少一个包含一个或多个胺官能团的聚合物嵌段和至少一个不包含任何胺官能团的聚合物嵌段的嵌段共聚物。

公开(公告)号：US20040229552A1

公开(公告)日：2004-11-18

申请号：US10855276

申请日：2004-05-27

Applicant: Cabot Microelectronics Corporation

Inventor： Isaac K. Cherian ,  Phillip Carter ,  Jeffrey P. Chamberlain ,  Kevin Moeggenborg ,  David W. Boldridge

IPC: B24B001/00

CPC classification number: C09K3/1454 ,  B24B37/044 ,  B24B37/046 ,  C09G1/02 ,  C09K3/1436

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract translation: 本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或 其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

公开(公告)号：US20040180612A1

公开(公告)日：2004-09-16

申请号：US10801316

申请日：2004-03-16

Applicant: Cabot Microelectronics Corporation

Inventor： Renjie Zhou ,  Steve K. Grumbine ,  Isaac K. Cherian

IPC: B24B001/00 ,  B24B007/19

CPC classification number: B24B37/24 ,  B24B37/245 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  Y10T156/1051

Abstract: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

Abstract translation: 本发明提供了一种化学机械抛光系统，其包括研磨剂，载体和硼酸或其共轭碱，其中硼酸和共轭碱在抛光体系中不以一定的量存在于抛光体系中 pH缓冲液或不是硼酸的水溶性含硼化合物或其盐，以及使用化学机械抛光系统抛光基材的方法。

公开(公告)号：US20030170991A1

公开(公告)日：2003-09-11

申请号：US10353542

申请日：2003-01-29

Applicant: Cabot Microelectronics Corporation

Inventor： Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian ,  Renjie Zhou

IPC: H01L021/302 ,  H01L021/461

CPC classification number: C09G1/02

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitrites, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and (iv) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith. Moreover, the invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (a) contacting the first metal layer with the system, and (b) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

Abstract translation: 本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种 抛光添加剂，其增加系统抛光至少一层基材的速率，其中抛光添加剂选自焦磷酸盐，缩合磷酸盐，膦酸及其盐，胺，氨基醇，酰胺，亚胺， 亚氨基酸，亚硝酸盐，亚硝基，硫醇，硫酯，硫醚，硫代硫酸，碳硫酸，硫代羧酸，硫代水杨酸及其混合物，和（iv）抛光垫和/或研磨剂。 本发明还提供了抛光衬底的方法，包括使衬底的表面与系统接触并且用衬底的至少一部分抛光。 此外，本发明提供了一种用于抛光一层或多层多层基底的方法，所述多层基底包括第一金属层和第二层，所述第二层包括（a）使所述第一金属层与所述系统接触，和（b）抛光所述第一金属 层，直到第一金属层的至少一部分从衬底去除。

公开(公告)号：US20040014400A1

公开(公告)日：2004-01-22

申请号：US10199704

申请日：2002-07-19

Applicant: Cabot Microelectronics Corporation

Inventor： Isaac K. Cherian ,  Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Eric H. Klingenberg

IPC: B24B001/00

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/32134

Abstract: The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10null10 S/cm to about 106 S/cm, and (c) a liquid carrier.

Abstract translation: 本发明提供了一种抛光系统，其包括（a）研磨剂，抛光垫，用于氧化基材的装置或其任何组合，（b）导电聚合物，其导电率为约10 -10 S / cm至 约10 6 S / cm，和（c）液体载体。

公开(公告)号：US20040014398A1

公开(公告)日：2004-01-22

申请号：US10198841

申请日：2002-07-19

Applicant: Cabot Microelectronics Corporation

Inventor： Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Isaac K. Cherian ,  Eric H. Klingenberg

IPC: B24B007/22 ,  B24B001/00

CPC classification number: C09K3/1463 ,  B24B37/00 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10null10 S/cm to about 106 S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供一种抛光衬底的方法，其包括（i）使衬底与抛光系统接触，所述抛光系统包括（a）研磨剂，抛光垫，用于氧化衬底的装置或其任何组合，（b）导电聚合物，其具有 约10 -10 S / cm至约10 6 S / cm的电导率，和（c）液体载体，和（ii）研磨或除去基材的至少一部分以抛光基材。

公开(公告)号：US20030060135A1

公开(公告)日：2003-03-27

申请号：US09961934

申请日：2001-09-24

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin Moeggenborg ,  Vlasta Brusic Kaufman ,  Isaac K. Cherian

IPC: B24B001/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

Abstract: The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.

Abstract translation: 本发明提供了一种使用包括磨料和/或抛光垫，稀土盐，比稀土盐更强氧化剂的氧化剂的化学机械抛光系统抛光包含金属层的基材的方法，以及液体 载体