发明申请
US20040229552A1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
有权
用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
- 专利标题： Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
- 专利标题（中）： 用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
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申请号： US10855276申请日： 2004-05-27
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公开(公告)号： US20040229552A1公开(公告)日： 2004-11-18
- 发明人: Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
- 申请人： Cabot Microelectronics Corporation
- 申请人地址： IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： IL Aurora
- 主分类号： B24B001/00
- IPC分类号： B24B001/00
摘要：
The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
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