发明申请
US20040251236A1 [DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL]
失效
[用于电介质膜的沉积选择性蚀刻沉积工艺]
- 专利标题: [DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL]
- 专利标题(中): [用于电介质膜的沉积选择性蚀刻沉积工艺]
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申请号: US10445240申请日: 2003-05-23
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公开(公告)号: US20040251236A1公开(公告)日: 2004-12-16
- 发明人: Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Shuang Li , Padmanabhan Krishnaraj
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23F001/00
- IPC分类号: C23F001/00 ; C03C015/00 ; C03C025/68
摘要:
Abstract of the Disclosure A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.
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