公开(公告)号：US20040251236A1

公开(公告)日：2004-12-16

申请号：US10445240

申请日：2003-05-23

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Shuang Li ,  Padmanabhan Krishnaraj

IPC分类号： C23F001/00 ,  C03C015/00 ,  C03C025/68

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： Abstract of the Disclosure A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.

摘要翻译： 发明内容提供了用于填充衬底表面中的间隙的沉积/蚀刻/沉积工艺。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。