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    [DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL]
    1.
    发明申请
    [DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL] 失效
    [用于电介质膜的沉积选择性蚀刻沉积工艺]

    公开(公告)号：US20040251236A1

    公开(公告)日：2004-12-16

    申请号：US10445240

    申请日：2003-05-23

    申请人： Applied Materials, Inc.

    发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Shuang Li ,  Padmanabhan Krishnaraj

    IPC分类号： C23F001/00 ,  C03C015/00 ,  C03C025/68

    CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： Abstract of the Disclosure A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.

    摘要翻译： 发明内容提供了用于填充衬底表面中的间隙的沉积/蚀刻/沉积工艺。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

    HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
    2.
    发明申请
    HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features 失效
    HDP-CVD去/蚀刻/去除工艺，用于将沉积改进为高纵横比特征

    公开(公告)号：US20030207580A1

    公开(公告)日：2003-11-06

    申请号：US10138189

    申请日：2002-05-03

    申请人： Applied Materials, Inc.

    发明人： Dongqing Li ,  Xiaolin Chen ,  Lin Zhang

    IPC分类号： H01L021/311

    CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  Y10S438/978

    摘要： A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

    摘要翻译： 一种在设置在基板处理室中的基板上沉积膜的方法。 该方法包括通过从流入处理室的第一气态混合物形成高密度等离子体沉积薄膜的第一部分。 然后停止沉积过程，并通过使卤素蚀刻剂流入处理室来蚀刻膜的部分沉积的第一部分。 接下来，通过使钝化气体流入处理室来钝化蚀刻膜的表面，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将薄膜的第二部分沉积在第一部分上 。 在一个实施方案中，钝化气体由不含惰性气体的氧源组成。