公开(公告)号：US20040245091A1

公开(公告)日：2004-12-09

申请号：US10456611

申请日：2003-06-04

申请人： Applied Materials, Inc.

发明人： M Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  DongQing Li ,  Katsunary Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C014/00 ,  C23C014/32 ,  C25B009/00 ,  C25B011/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 公开的摘要使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 在第一沉积步骤期间的流体气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US20040251236A1

公开(公告)日：2004-12-16

申请号：US10445240

申请日：2003-05-23

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Shuang Li ,  Padmanabhan Krishnaraj

IPC分类号： C23F001/00 ,  C03C015/00 ,  C03C025/68

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： Abstract of the Disclosure A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.

摘要翻译： 发明内容提供了用于填充衬底表面中的间隙的沉积/蚀刻/沉积工艺。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。