发明申请
- 专利标题： Method for forming light-absorbing layer
- 专利标题（中）： 光吸收层形成方法
-
申请号： US10482750申请日： 2002-06-10
-
公开(公告)号： US20050006221A1公开(公告)日： 2005-01-13
- 发明人: Nobuyoshi Takeuchi , Tomoyuki Kume , Takashi Komaru
- 申请人： Nobuyoshi Takeuchi , Tomoyuki Kume , Takashi Komaru
- 优先权： JP2001-244973 20010706; JP2001-348084 20011010
- 国际申请： PCT/JP02/05730 WO 20020610
- 主分类号： H01L31/032
- IPC分类号： H01L31/032 ; C23C14/00 ; C23C14/32
摘要：
A method of forming a light-absorbing layer of CIGS by first forming a thin-film precursor of Ib-IIIb group metals by sputtering and then treating by heat the precursor in a selenium atmosphere, wherein particles sputtered from an alloy target of Ib group-IIIb group metals and a single metal target of Ib group or IIIb group metal, disposed opposite to each other, are well mixed to form a thin single-layered precursor being free from the occurrence of reaction of metals at a boundary of layers.
信息查询
IPC分类:
