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    Light-emitting device and lamp
    2.
    发明授权
    Light-emitting device and lamp 失效
    发光装置和灯

    公开(公告)号：US08421111B2

    公开(公告)日：2013-04-16

    申请号：US13503242

    申请日：2011-08-23

    Applicant: Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Takaari Uemoto ,  Masahiro Miki ,  Atsushi Motoya

    Inventor： Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Takaari Uemoto ,  Masahiro Miki ,  Atsushi Motoya

    IPC: H01L33/00

    CPC classification number: H01L33/507 ,  F21K9/232 ,  F21V3/00 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: A light-emitting device including: a base which is translucent; a semiconductor light-emitting element provided on the base; a sealing member for sealing the semiconductor light-emitting element and including a first wavelength conversion material for converting a wavelength of light emitted by the semiconductor light-emitting element to a predetermined wavelength; and a groove provided on a side of the semiconductor light-emitting element, recessed from a top surface of the base on which the semiconductor light-emitting element is provided or a back surface of the base which is a surface opposite to the top surface, and for holding a second wavelength conversion material for converting the wavelength of the light emitted by the semiconductor light-emitting element to the predetermined wavelength.

    Abstract translation: 一种发光器件，包括：半透明的基底; 设置在基座上的半导体发光元件; 用于密封半导体发光元件并且包括用于将由半导体发光元件发射的光的波长转换为预定波长的第一波长转换材料的密封构件; 以及设置在半导体发光元件的从设置有半导体发光元件的基座的顶面凹下的槽或与该顶面相反的表面的基座的后表面的槽， 并且用于保持用于将由半导体发光元件发射的光的波长转换为预定波长的第二波长转换材料。

    LIGHT-EMITTING DEVICE AND LAMP
    4.
    发明申请
    LIGHT-EMITTING DEVICE AND LAMP 失效
    发光装置和灯

    公开(公告)号：US20120235181A1

    公开(公告)日：2012-09-20

    申请号：US13503242

    申请日：2011-08-23

    Applicant: Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Takaari Uemoto ,  Masahiro Miki ,  Atsushi Motoya

    Inventor： Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Takaari Uemoto ,  Masahiro Miki ,  Atsushi Motoya

    IPC: H01L33/08

    CPC classification number: H01L33/507 ,  F21K9/232 ,  F21V3/00 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: A light-emitting device including: a base which is translucent; a semiconductor light-emitting element provided on the base; a sealing member for sealing the semiconductor light-emitting element and including a first wavelength conversion material for converting a wavelength of light emitted by the semiconductor light-emitting element to a predetermined wavelength; and a groove provided on a side of the semiconductor light-emitting element, recessed from a top surface of the base on which the semiconductor light-emitting element is provided or a back surface of the base which is a surface opposite to the top surface, and for holding a second wavelength conversion material for converting the wavelength of the light emitted by the semiconductor light-emitting element to the predetermined wavelength.

    Abstract translation: 一种发光器件，包括：半透明的基底; 设置在基座上的半导体发光元件; 用于密封半导体发光元件并且包括用于将由半导体发光元件发射的光的波长转换为预定波长的第一波长转换材料的密封构件; 以及设置在半导体发光元件的从设置有半导体发光元件的基座的顶面凹下的槽或与该顶面相反的表面的基座的后表面的槽， 并且用于保持用于将由半导体发光元件发射的光的波长转换为预定波长的第二波长转换材料。

    LIGHT BULB SHAPED LAMP AND LIGHTING APPARATUS
    5.
    发明申请
    LIGHT BULB SHAPED LAMP AND LIGHTING APPARATUS 审中-公开
    灯泡形状灯和照明装置

    公开(公告)号：US20120217862A1

    公开(公告)日：2012-08-30

    申请号：US13393552

    申请日：2011-09-22

    Applicant: Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Masahiro Miki ,  Takaari Uemoto

    Inventor： Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Hideo Nagai ,  Masahiro Miki ,  Takaari Uemoto

    IPC: H05B33/08

    CPC classification number: F21K9/232 ,  F21V29/506 ,  F21V29/507 ,  F21Y2105/10 ,  F21Y2107/90 ,  F21Y2115/10

    Abstract: A light bulb shaped lamp capable of achieving light-distribution property equivalent to that of a conventional incandescent light bulb and easily fixing the LED module in the lamp is provided. The lamp according to the present invention includes an LED module housed in a hollow globe and a fixing component for fixing the LED module. The LED module includes a translucent board having a first main surface with an LED mounted thereon and a second main surface. The board includes a first light-emitting area and a second light-emitting area, the first light-emitting area in which predetermined light by the LED is emitted from the first main surface toward the globe, and the second light-emitting area in which predetermined light by the LED is emitted from the second main surface toward the globe.

    Abstract translation: 提供能够实现与常规白炽灯泡相同的光分布特性并且容易地将LED模块固定在灯中的灯泡形灯。 根据本发明的灯包括容纳在中空球体中的LED模块和用于固定LED模块的固定部件。 LED模块包括具有安装在其上的LED的第一主表面和第二主表面的半透明板。 该板包括第一发光区域和第二发光区域，其中由LED的预定光从第一主表面朝向球体发射的第一发光区域和第二发光区域，其中 LED的预定光从第二主表面朝向球体发射。

    Metal Halide Lamp and Lighting Unit Utilizing the Same
    6.
    发明申请
    Metal Halide Lamp and Lighting Unit Utilizing the Same 审中-公开
    金属卤化物灯和照明单元利用它

    公开(公告)号：US20090001887A1

    公开(公告)日：2009-01-01

    申请号：US11814439

    申请日：2006-01-11

    Applicant: Nobuyoshi Takeuchi ,  Atsushi Utsubo ,  Yukiya Kanazawa

    Inventor： Nobuyoshi Takeuchi ,  Atsushi Utsubo ,  Yukiya Kanazawa

    IPC: H01J61/18

    CPC classification number: H01J61/125 ,  H01J61/827

    Abstract: An arc tube (6) of a metal halide lamp (1) has a ceramic envelope (10), a pair of electrodes (16), and metal halides enclosed therein. The arc tube (6) satisfies the relationship EL/Di>4.0, where EL represents the distance between the pair of electrodes (16) in mm, Di represents the maximum inside diameter of the arc tube (6) measured in mm at a portion positionally corresponding to the gap between the pair of electrodes (16). In addition, the metal halides enclosed within the arc tube (6) include at least sodium halide and neodymium halide. With this configuration, the metal halide lamp (1) achieves an improved emission color characteristic, while maintaining high lamp efficiency.

    Abstract translation: 金属卤化物灯（1）的电弧管（6）具有陶瓷外壳（10），一对电极（16）和封入其中的金属卤化物。 电弧管（6）满足EL / Di> 4.0的关系，其中EL表示一对电极（16）之间的距离（mm），Di表示以部分（mm）测量的电弧管（6）的最大内径 位置地对应于一对电极（16）之间的间隙。 此外，封闭在电弧管（6）内的金属卤化物至少包括卤化钠和卤化钕。 通过这种结构，金属卤化物灯（1）在保持高效率的灯光的同时实现了改善的发光颜色特性。

    Phosphorescent phosphor and method of manufacturing thereof
    7.
    发明授权
    Phosphorescent phosphor and method of manufacturing thereof 有权
    磷光体荧光体及其制造方法

    公开(公告)号：US07422704B2

    公开(公告)日：2008-09-09

    申请号：US10551424

    申请日：2004-11-05

    Applicant: Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

    Inventor： Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

    IPC: C09K11/55

    CPC classification number: C09K11/7792

    Abstract: A phosphorescent phosphor having excellent afterglow luminance characteristics, even under low illumination intensity of radiation conditions, compared to conventional strontium aluminate phosphorescent phosphors of the same type, and particularly a phosphorescent phosphor having excellent initial afterglow luminance characteristics and excellent afterglow luminance characteristics at 60 and 90 minutes after cessation of the excitation, with following requirements: 0.015

    Abstract translation: 与常规的相同类型的锶铝酸盐磷光体磷光体相比，即使在低辐射条件的照明强度下，具有优异的余辉亮度特性的磷光体荧光体，特别是具有优异的初始余辉亮度特性和优异的余辉辉度特性的磷光体荧光体在60和90° 停止激发后几分钟，具有以下要求：<？in-line-formula description =“In-line formula”end =“lead”？> 0.015 <？in-line-formula description =“In-line Formulas”end = 导线“→0.03 <= Ba /（Sr + Ba）<= 0.2和2.1 <= Al /（Sr + Ba + Eu + Dy）<= 2.9 <？在线公式描述=”在线公式 “end =”tail“？>

    Method of fabricating non volatile memory device with memory cells which differ in gate couple ratio
    10.
    发明授权
    Method of fabricating non volatile memory device with memory cells which differ in gate couple ratio 失效
    具有不同门对数比的存储单元的非易失性存储器件的制造方法

    公开(公告)号：US5953610A

    公开(公告)日：1999-09-14

    申请号：US889192

    申请日：1997-07-08

    Applicant: Nobuyoshi Takeuchi

    Inventor： Nobuyoshi Takeuchi

    IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

    CPC classification number: H01L27/11517 ,  H01L27/115 ,  H01L29/42324

    Abstract: According to the present invention, there is provided a non-volatile semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, wherein the memory cells contain two or more types of memory cells, which differs in gate couple ratio. Each memory cell includes source-drain regions provided apart from each other in a semiconductor substrate having a conductivity type, the source-drain regions having a conductivity type opposite to that of the semiconductor substrate, a floating gate provided above a channel region formed between the source-drain regions, and a control gate provided above a surface of the floating gate, and the memory cells contain two or more types of memory cells, which differ in relation to an area of a region in which the floating gate and the control gate overlap. The memory cells having a low gate couple ratio exhibit characteristics similar to those of a mask ROM, which gives priority to reading, whereas the memory cells having a high gate couple ratio, exhibit excellent programming and erasing characteristics.

    Abstract translation: 根据本发明，提供了一种非易失性半导体存储器件，包括其中布置有多个存储单元的存储单元阵列，其中存储单元包含两种或更多种类型的存储单元，其门对偶比不同 。 每个存储单元包括在具有导电类型的半导体衬底中彼此分开设置的源极 - 漏极区域，源极 - 漏极区域具有与半导体衬底的导电类型相反的导电类型，浮置栅极设置在形成在 源极 - 漏极区域和设置在浮置栅极的表面上方的控制栅极，并且存储器单元包含两个或更多种类型的存储器单元，其相对于浮动栅极和控制栅极的区域的区域而不同 交叠。 具有低栅极耦合比的存储单元表现出与掩盖ROM相似的特性，其优先于读取，而具有高栅极耦合比的存储单元表现出优异的编程和擦除特性。

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