公开(公告)号：US08828479B2

公开(公告)日：2014-09-09

申请号：US10599689

申请日：2005-04-08

申请人： Tomoyuki Kume ,  Takashi Komaru

发明人： Tomoyuki Kume ,  Takashi Komaru

IPC分类号： H01L31/00 ,  H01L31/032

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A process for producing a light absorbing layer for thin-film solar cell that possesses a film structure having a constituent component of chalcopyrite compound (Cu(In+Ga)Se2) uniformly distributed thereinside. There is provided a process for producing a light absorbing layer, including the precursor forming step of superimposing on an Mo electrode layer, adjacent to the electrode layer, an In metal layer and a Cu—Ga alloy layer according to sputtering technique; a first selenization step of, while accommodating precursor-provided substrate in an airtight space, introducing hydrogen selenide gas in the airtight space conditioned so as to range from room temperature to 250° C.; a second selenization step of additionally introducing hydrogen selenide gas in the airtight space heated so as to range from 250° to 450° C.; a third selenization step of, while causing the hydrogen selenide gas having been introduced up to the second selenization step to remain, heating the interior of the airtight space so as to range from 450° to 650° C. and, within this range of temperature, performing heat treatment of the substrate; and a cooling step of cooling the substrate after the heat treatment.

摘要翻译： 一种具有均匀分布在其中的具有黄铜矿化合物（Cu（In + Ga）Se2）构成成分的薄膜结构的薄膜太阳能电池用光吸收层的制造方法。 提供了一种制造光吸收层的方法，包括根据溅射技术叠加在与电极层相邻的Mo电极层，In金属层和Cu-Ga合金层上的前体形成步骤; 第一硒化步骤，在将前体提供的基板容纳在气密空间中的同时，将空气中的硒化氢气体引入到室温至250℃范围内的气密空间中; 在加热到250℃至450℃的气密空间中另外引入硒化氢气体的第二硒化步骤; 在第三硒化步骤中，同时使已经引入到第二硒化步骤的硒化氢气体保持，将气密空间的内部加热至450℃至650℃，并且在该温度范围内 进行基板的热处理; 以及在热处理后冷却基板的冷却工序。

公开(公告)号：US20080035199A1

公开(公告)日：2008-02-14

申请号：US10599689

申请日：2005-04-08

申请人： Tomoyuki Kume ,  Takashi Komaru

发明人： Tomoyuki Kume ,  Takashi Komaru

IPC分类号： H01L31/0272

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A process for producing a light absorbing layer for thin-film solar cell that possesses a film structure having a constituent component of chalcopyrite compound (Cu(In+Ga)Se2) uniformly distributed thereinside. There is provided a process for producing a light absorbing layer, including the precursor forming step of superimposing on an Mo electrode layer, adjacent to the electrode layer, an In metal layer and a Cu—Ga alloy layer according to sputtering technique; a first selenization step of, while accommodating precursor-provided substrate in an airtight space, introducing hydrogen selenide gas in the airtight space conditioned so as to range from room temperature to 250° C.; a second selenization step of additionally introducing hydrogen selenide gas in the airtight space heated so as to range from 250° to 450° C.; a third selenization step of, while causing the hydrogen selenide gas having been introduced up to the second selenization step to remain, heating the interior of the airtight space so as to range from 450° to 650° C. and, within this range of temperature, performing heat treatment of the substrate; and a cooling step of cooling the substrate after the heat treatment.

摘要翻译： 一种具有均匀分布在其中的具有黄铜矿化合物（Cu（In + Ga）Se 2/2）构成成分的薄膜结构的薄膜太阳能电池用光吸收层的制造方法。 提供了一种制造光吸收层的方法，包括根据溅射技术叠加在与电极层相邻的Mo电极层，In金属层和Cu-Ga合金层上的前体形成步骤; 第一硒化步骤，在将前体提供的基板容纳在气密空间中的同时，将空气中的硒化氢气体引入到室温至250℃范围内的气密空间中; 在加热到250℃至450℃的气密空间中另外引入硒化氢气体的第二硒化步骤; 在第三硒化步骤中，同时使已经引入到第二硒化步骤的硒化氢气体保持，将气密空间的内部加热至450℃至650℃，并且在该温度范围内 进行基板的热处理; 以及在热处理后冷却基板的冷却工序。

公开(公告)号：US20050006221A1

公开(公告)日：2005-01-13

申请号：US10482750

申请日：2002-06-10

申请人： Nobuyoshi Takeuchi ,  Tomoyuki Kume ,  Takashi Komaru

发明人： Nobuyoshi Takeuchi ,  Tomoyuki Kume ,  Takashi Komaru

IPC分类号： H01L31/032 ,  C23C14/00 ,  C23C14/32

CPC分类号： C23C14/3464 ,  C23C14/0623 ,  H01L31/0322 ,  Y02E10/541

摘要： A method of forming a light-absorbing layer of CIGS by first forming a thin-film precursor of Ib-IIIb group metals by sputtering and then treating by heat the precursor in a selenium atmosphere, wherein particles sputtered from an alloy target of Ib group-IIIb group metals and a single metal target of Ib group or IIIb group metal, disposed opposite to each other, are well mixed to form a thin single-layered precursor being free from the occurrence of reaction of metals at a boundary of layers.

摘要翻译： 首先通过溅射形成Ib-IIIb族金属的薄膜前体，然后在硒气氛中通过加热处理前体，形成CIGS的光吸收层的方法，其中从Ib组合金属的合金靶溅射的颗粒， IIIb族金属和彼此相对设置的Ib族或IIIb族金属的单一金属靶被充分混合以形成在层边界处不发生金属反应的薄单层前体。