发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US10919402申请日： 2004-08-17
-
公开(公告)号： US20050012214A1公开(公告)日： 2005-01-20
- 发明人: Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
- 申请人： Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2001-387051 20011220
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/60 ; H01L23/12 ; H01L23/482 ; H01L21/4763 ; H01L29/40
摘要：
The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
公开/授权文献
- US06954001B2 Semiconductor device including a diffusion layer 公开/授权日：2005-10-11
信息查询
IPC分类:
