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公开(公告)号:US08813832B2
公开(公告)日:2014-08-26
申请号:US13257387
申请日:2010-03-12
申请人: Keiji Miki , Kenji Ando
发明人: Keiji Miki , Kenji Ando
CPC分类号: B61C17/00 , H01L23/467 , H01L2924/0002 , H05K7/209 , Y02T30/10 , H01L2924/00
摘要: A heat sink which is mounted in a movable body and which is to be exposed to a traveling air stream generated while the movable body moves includes a base and a heat dissipating portion having a plurality of fins. At least in a front end portion of the heat dissipating portion, the heat dissipating portion includes a rectifying portion provided so as to extend across a predetermined area in a longitudinal direction in front portions of slit-shaped flow paths at an upstanding end (i.e., an end apart from the base).
摘要翻译: 安装在可移动体中并且暴露于可移动体移动时产生的行进气流的散热器包括基部和具有多个翅片的散热部。 至少在散热部的前端部,散热部包括整流部,该整流部设置成在直立端部的狭缝状流路的前方在长度方向上延伸规定的区域(即, 距离基地的一端)。
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公开(公告)号:US20110298096A1
公开(公告)日:2011-12-08
申请号:US13137380
申请日:2011-08-10
申请人: Keiji Miki
发明人: Keiji Miki
IPC分类号: H01L23/544
CPC分类号: H01L22/34 , H01L24/03 , H01L24/05 , H01L2224/0392 , H01L2224/0401 , H01L2224/05551 , H01L2224/05554 , H01L2224/05644 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/00014
摘要: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.
摘要翻译: 半导体晶片10具有多个半导体芯片区域10a和划线区域10b,每个半导体芯片区域10a具有半导体元件和电连接到各个半导体元件的电极焊盘(电极部分)16a,划线区域10b具有监视器 电连接到监视器元件的元件和电极焊盘(电极部分)16b,其中突出电极18仅通过无电镀仅选择性地形成在半导体芯片区域10a中的各个电极焊盘16a上。 因此,例如,电极焊盘16b被绝缘膜14覆盖。
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公开(公告)号:US20110241178A1
公开(公告)日:2011-10-06
申请号:US13077322
申请日:2011-03-31
申请人: Keiji Miki
发明人: Keiji Miki
CPC分类号: H01L24/05 , H01L21/6836 , H01L23/3114 , H01L23/3192 , H01L23/564 , H01L23/585 , H01L24/03 , H01L2221/6834 , H01L2224/02166 , H01L2224/05553 , H01L2224/05556 , H01L2224/05567 , H01L2224/05571 , H01L2224/05624 , H01L2224/45147 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2224/48824 , H01L2924/00 , H01L2224/48 , H01L2224/05552
摘要: An organic protective film 23′ is formed on the periphery of a chip region 12 on a substrate 11 so as to continuously surround the internal part of the chip region 12. A passivation film 22 and an organic protective film 23 form a closed-loop opening on a cap layer 47.
摘要翻译: 在基板11上的芯片区域12的周围形成有机保护膜23',以连续地包围芯片区域12的内部。钝化膜22和有机保护膜23形成闭环开口 在盖层47上。
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公开(公告)号:US07728429B2
公开(公告)日:2010-06-01
申请号:US11826673
申请日:2007-07-17
申请人: Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
发明人: Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
IPC分类号: H01L23/495
CPC分类号: H01L24/81 , H01L23/13 , H01L23/49816 , H01L23/5386 , H01L24/16 , H01L25/0655 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/10175 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/45124 , H01L2224/48465 , H01L2224/49171 , H01L2224/8121 , H01L2224/81815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/157 , H01L2924/19107 , H01L2924/351 , H01L2924/00
摘要: A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.
摘要翻译: 根据本发明的半导体器件包括在电极焊盘上形成有焊料凸点(24)(突出电极)的IC芯片(半导体元件)(2,3,4)和具有连接端子的第一布线板(1) 7),IC芯片(2,3,4)的各个焊料凸块(24)连接到其上,用于连接到外部设备的外部连接端子(8)和形成在各个槽部分中的导线(9) 在板表面上并连接到相应的连接端子(7)。 尽管导体线(9)的间距减小,但是沟槽部分的存在使得横截面增加,从而允许降低布线电阻。
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公开(公告)号:US06921583B2
公开(公告)日:2005-07-26
申请号:US10781358
申请日:2004-02-17
申请人: Ken Koyama , Keiji Miki , Makoto Yoshida , Kenji Shinozaki
发明人: Ken Koyama , Keiji Miki , Makoto Yoshida , Kenji Shinozaki
CPC分类号: C22C21/02 , B23K1/19 , B23K35/3006 , B23K2103/10 , B23K2103/12 , B23K2103/18 , B32B15/015 , B32B15/018 , Y10T428/12736 , Y10T428/1275 , Y10T428/12896
摘要: With an Al—Cu bonded structure, an Ag layer can be remained at the Al—Cu bonding interlayer providing ductile deformation behavior and a tensile strength at the bonded interlayer similar to that of the Al base material. This results in superior bonding characteristics. Furthermore, a thin Al—Cu bonded structure can be obtained as a result of using the Al—Cu dissimilar material bonded section, which has superior workability, as the base material to perform rolling for wall-thickness reduction. The thin Al—Cu structure has superior dimensional accuracy and can meet diverse dimensional demands. The structure combines the light weight of Al with its particular heat transfer and heat dissipative characteristics and anti-corrosive properties of Cu, allowing it to meet the compact, thin, light-weight, and high-performance needs of electronic devices. The structure can be widely used in heat exchanges and heat transfer devices.
摘要翻译: 通过Al-Cu键合结构,可以在Al-Cu键合夹层处留下Ag层,提供延性变形行为和键合中间层处的拉伸强度,类似于Al基材料。 这导致优异的粘合特性。 此外,由于使用具有优异的可加工性的Al-Cu异种材料接合部分作为用于进行壁厚降低的轧制的基材,可以获得薄的Al-Cu结合结构。 薄的Al-Cu结构具有优异的尺寸精度,可以满足不同的尺寸要求。 该结构将铝的重量轻重于其特定的传热和散热特性以及Cu的抗腐蚀性能,使其能够满足电子设备的紧凑,薄型,轻量化和高性能的需求。 该结构可广泛用于热交换和热传递装置。
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公开(公告)号:US20050029333A1
公开(公告)日:2005-02-10
申请号:US10781358
申请日:2004-02-17
申请人: Ken Koyama , Keiji Miki , Makoto Yoshida , Kenji Shinozaki
发明人: Ken Koyama , Keiji Miki , Makoto Yoshida , Kenji Shinozaki
CPC分类号: C22C21/02 , B23K1/19 , B23K35/3006 , B23K2103/10 , B23K2103/12 , B23K2103/18 , B32B15/015 , B32B15/018 , Y10T428/12736 , Y10T428/1275 , Y10T428/12896
摘要: With an Al—Cu bonded structure, an Ag layer can be remained at the Al—Cu bonding interlayer, providing ductile deformation behavior and a tensile strength at the bonded interlayer similar to that of the Al base material. This results in superior bonding characteristics. Furthermore, a thin Al—Cu bonded structure can be obtained as a result of using the Al—Cu dissimilar material bonded section, which has superior workability, as the base material to perform rolling for wall-thickness reduction. The thin Al—Cu structure has superior dimensional accuracy and can meet diverse dimensional demands. The structure combines the light weight of Al with its particular heat transfer and heat dissipative characteristics and anti-corrosive properties of Cu, allowing it to meet the compact, thin, light-weight, and high-performance needs of electronic devices. The structure can be widely used in heat exchangers and heat transfer devices.
摘要翻译: 通过Al-Cu键合结构,可以在Al-Cu键合中间层处保留Ag层,提供与Al基材料类似的粘结中间层的延性变形特性和拉伸强度。 这导致优异的粘合特性。 此外,由于使用具有优异的可加工性的Al-Cu异种材料接合部分作为用于进行壁厚降低的轧制的基材,可以获得薄的Al-Cu结合结构。 薄的Al-Cu结构具有优异的尺寸精度,可以满足不同的尺寸要求。 该结构将铝的重量轻重于其特定的传热和散热特性以及Cu的抗腐蚀性能,使其能够满足电子设备的紧凑,薄型,轻量化和高性能的需求。 该结构可广泛用于热交换器和传热装置。
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公开(公告)号:US20120012294A1
公开(公告)日:2012-01-19
申请号:US13257387
申请日:2010-03-12
申请人: Keiji Miki , Kenji Ando
发明人: Keiji Miki , Kenji Ando
IPC分类号: F28F7/00
CPC分类号: B61C17/00 , H01L23/467 , H01L2924/0002 , H05K7/209 , Y02T30/10 , H01L2924/00
摘要: A heat sink which is mounted in a movable body and which is to be exposed to a traveling air stream generated while the movable body moves includes a base and a heat dissipating portion having a plurality of fins. At least in a front end portion of the heat dissipating portion, the heat dissipating portion includes a rectifying portion provided so as to extend across a predetermined area in a longitudinal direction in front portions of slit-shaped flow paths at an upstanding end (i.e., an end apart from the base).
摘要翻译: 安装在可移动体中并且暴露于可移动体移动时产生的行进气流的散热器包括基部和具有多个翅片的散热部。 至少在散热部的前端部,散热部包括整流部,该整流部设置成在直立端部的狭缝状流路的前方在长度方向上延伸规定的区域(即, 距离基地的一端)。
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公开(公告)号:US08022508B2
公开(公告)日:2011-09-20
申请号:US11873436
申请日:2007-10-17
申请人: Keiji Miki
发明人: Keiji Miki
IPC分类号: H01L23/544
CPC分类号: H01L22/34 , H01L24/03 , H01L24/05 , H01L2224/0392 , H01L2224/0401 , H01L2224/05551 , H01L2224/05554 , H01L2224/05644 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/00014
摘要: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.
摘要翻译: 半导体晶片10具有多个半导体芯片区域10a和划线区域10b,每个半导体芯片区域10a具有半导体元件和电连接到各个半导体元件的电极焊盘(电极部分)16a,划线区域10b具有监视器 电连接到监视器元件的元件和电极焊盘(电极部分)16b,其中突出电极18仅通过无电镀仅选择性地形成在半导体芯片区域10a中的各个电极焊盘16a上。 因此,例如,电极焊盘16b被绝缘膜14覆盖。
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公开(公告)号:US06954001B2
公开(公告)日:2005-10-11
申请号:US10919402
申请日:2004-08-17
申请人: Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
发明人: Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
IPC分类号: H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/12 , H01L23/482 , H01L23/48
CPC分类号: H01L24/13 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05548 , H01L2224/05557 , H01L2224/05571 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/114 , H01L2224/116 , H01L2224/13022 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/16 , H01L2224/81801 , H01L2924/0001 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2224/05552 , H01L2924/013
摘要: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
摘要翻译: 半导体器件包括在其表面上形成有电极的半导体元件和形成在半导体元件的表面上并与电极电连接的金属布线。 金属布线具有用作外部电极的外部电极部分。 外部电极部分的厚度大于金属布线的非电极部分的厚度,即除了外部电极部分之外的金属布线的一部分。
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公开(公告)号:US20050012214A1
公开(公告)日:2005-01-20
申请号:US10919402
申请日:2004-08-17
申请人: Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
发明人: Yoshifumi Nakamura , Ryuichi Sahara , Nozomi Shimoishizaka , Kazuyuki Kainou , Keiji Miki , Kazumi Watase , Yasutake Yaguchi
IPC分类号: H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/12 , H01L23/482 , H01L21/4763 , H01L29/40
CPC分类号: H01L24/13 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05548 , H01L2224/05557 , H01L2224/05571 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/114 , H01L2224/116 , H01L2224/13022 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/16 , H01L2224/81801 , H01L2924/0001 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2224/05552 , H01L2924/013
摘要: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
摘要翻译: 半导体器件包括在其表面上形成有电极的半导体元件和形成在半导体元件的表面上并与电极电连接的金属布线。 金属布线具有用作外部电极的外部电极部分。 外部电极部分的厚度大于金属布线的非电极部分的厚度,即除了外部电极部分之外的金属布线的一部分。
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