发明申请
- 专利标题： Methods of forming a semiconductor device having a metal gate electrode and associated devices
- 专利标题（中）： 形成具有金属栅电极和相关器件的半导体器件的方法
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申请号： US10780244申请日： 2004-02-17
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公开(公告)号： US20050020042A1公开(公告)日： 2005-01-27
- 发明人: Seong-Jun Heo , Sun-Pil Youn , Sung-Man Kim , Si-Young Choi , Gil-Heyun Choi , Ja-Hum Ku , Chang-Won Lee , Jong-Myeong Lee , Kwon-Sun Ryu
- 申请人： Seong-Jun Heo , Sun-Pil Youn , Sung-Man Kim , Si-Young Choi , Gil-Heyun Choi , Ja-Hum Ku , Chang-Won Lee , Jong-Myeong Lee , Kwon-Sun Ryu
- 优先权： KR10-2003-0010403 20030219
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/28 ; H01L29/49 ; H01L29/78 ; H01L21/8238
摘要：
Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.