发明申请
- 专利标题： Method for fabricating semiconductor device having stacked-gate structure
- 专利标题（中）： 具有层叠栅结构的半导体器件的制造方法
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申请号： US10683612申请日： 2003-10-10
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公开(公告)号： US20050020044A1公开(公告)日： 2005-01-27
- 发明人: Tzu-En Ho , Chih-Hao Chang , Chang-Rong Wu , Kuo-Hui Su
- 申请人： Tzu-En Ho , Chih-Hao Chang , Chang-Rong Wu , Kuo-Hui Su
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 优先权： TW92120045 20030723
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/4763 ; H01L29/49
摘要：
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.