发明申请
US20050023591A1 Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
失效
具有多个浮动栅极的非易失性存储单元，形成在选择栅极之后并具有向上的突起
- 专利标题： Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
- 专利标题（中）： 具有多个浮动栅极的非易失性存储单元，形成在选择栅极之后并具有向上的突起
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申请号： US10632186申请日： 2003-07-30
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公开(公告)号： US20050023591A1公开(公告)日： 2005-02-03
- 发明人: Yi Ding
- 申请人： Yi Ding
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L21/332 ; H01L21/336 ; H01L29/76
摘要：
In a nonvolatile memory cell having at least two floating gates, each floating gate (160) has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (140). The spacer can be formed from a layer (160.2) deposited after the layer (160.1) which provides a lower portion of the floating gate. Alternatively, the upward protruding portion and the lower portion can be formed from the same layers or sub-layers all of which are present in both portions. The control gate (170) can be defined without photolithography. Other embodiments are also provided.
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