中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Application
US20050029611A1 Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same 有权
图像传感器包括具有偏移区域的薄膜晶体管光学传感器及其制造方法

  • Patent Title: Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same
  • Patent Title (中): 图像传感器包括具有偏移区域的薄膜晶体管光学传感器及其制造方法
  • Application No.: US10732320
    Application Date: 2003-12-09
  • Publication No.: US20050029611A1
    Publication Date: 2005-02-10
  • Inventor: Jin Jang , Ji Hur , Hyun Nam
  • Applicant: Jin Jang , Ji Hur , Hyun Nam
  • Priority: KR2003-54468 20030806
  • Main IPC: H01L29/786
  • IPC: H01L29/786 ;  H01L27/146 ;  H01L31/0376 ;  H01L31/10 ;  H01L31/0232
Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same
Abstract:
The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
Abstract(Chinese):

本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

Public/Granted literature
Information query
Global Dossier Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
Patent Agency Ranking
0/0