发明申请
- 专利标题: Thin film transistor array panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US10884083申请日: 2004-07-01
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公开(公告)号: US20050030440A1公开(公告)日: 2005-02-10
- 发明人: Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
- 申请人: Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2003-0044581 20030702; KR10-2003-0055415 20030811; KR10-2003-0055416 20030811
- 主分类号: G02F1/13
- IPC分类号: G02F1/13 ; G02F1/1339 ; G02F1/1362 ; G02F1/1368 ; G09F9/30 ; H01L21/28 ; H01L21/3205 ; H01L23/52 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; G02F1/136
摘要:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
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