发明申请
- 专利标题： Flat profile structures for bipolar transistors
- 专利标题（中）： 双极晶体管的平面结构
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申请号： US10624038申请日： 2003-07-21
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公开(公告)号： US20050032323A1公开(公告)日： 2005-02-10
- 发明人: Young-Kai Chen , Rose Kopf , Wei-Jer Sung , Nils Weimann
- 申请人： Young-Kai Chen , Rose Kopf , Wei-Jer Sung , Nils Weimann
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/331 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/732 ; H01L29/737
摘要：
A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
公开/授权文献
- US07541624B2 Flat profile structures for bipolar transistors 公开/授权日：2009-06-02
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