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US20050032357A1 Dielectric materials and methods for integrated circuit applications 审中-公开
用于集成电路应用的介质材料和方法

Dielectric materials and methods for integrated circuit applications
Abstract:
An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.
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