公开(公告)号：US20060131753A1

公开(公告)日：2006-06-22

申请号：US11341638

申请日：2006-01-30

Applicant: Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

Inventor： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

IPC: H01L23/48

CPC classification number: H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

Abstract translation: 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，电介质是直接光刻图案化的杂化有机 - 无机材料。

公开(公告)号：US20050032357A1

公开(公告)日：2005-02-10

申请号：US10886061

申请日：2004-07-08

Applicant: Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

Inventor： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

IPC: G01N27/00

CPC classification number: H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

Abstract translation: 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US20070077779A1

公开(公告)日：2007-04-05

申请号：US11606941

申请日：2006-12-01

Applicant: Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

Inventor： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

IPC: H01L21/31

CPC classification number: H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

Abstract: A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

Abstract translation: 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。

公开(公告)号：US20100215839A1

公开(公告)日：2010-08-26

申请号：US12588364

申请日：2009-10-13

Applicant: Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

Inventor： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

IPC: H05K3/00

CPC classification number: H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

Abstract: A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).

Abstract translation: 公开了一种用于制造集成电路的方法，其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上，其中介电材料的区域通过水解多个前体而形成，以形成由 氧化硅主链并具有与主链结合的有机取代基，并将杂化有机无机材料沉积在基材上，去除所选区域中的杂化有机 - 无机材料，以及在选定区域中沉积导电材料，其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物，其中R 1，R 2，R 3各自与Si结合，独立地为芳基，可交联基团或具有1-14个碳原子的烷基，其中R4为 选自烷氧基，酰氧基，-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法，包括：将通式（IV）的化合物与四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷和二氯硅烷选自下列的硅烷水解： ：R1R2R4MR5，其中R1，R2和R4独立地是芳基，烷基，烯基，环氧基或炔基，其中R1，R2和R4中的至少一个是完全或部分氟化的，其中M选自周期表的第14族 ，其中R 5为烷氧基，OR 3或卤素（X）。

公开(公告)号：US20070063188A1

公开(公告)日：2007-03-22

申请号：US10552737

申请日：2004-04-13

Applicant: Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

Inventor： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

IPC: H01L51/00 ,  C07F7/12

CPC classification number: C07F7/12 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76801

Abstract: The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

Abstract translation: 本发明涉及适用于集成电路和其他类似应用的电介质的薄膜及其生产方法。 特别地，本发明涉及包含至少部分交联的硅氧烷结构的薄膜，所述硅氧烷结构可通过一种或多种通式为R 1 -R 2 - 其中X 1是离去基团，R 2是具有（X 1）3个 3至16个碳原子的芳基，具有5至18个碳原子的芳基或具有7至16个碳原子的多环烷基，R 1是R 2的取代基， 选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基，以及具有5或6个碳原子的芳族基团，每个所述基团是任选的 取代，Cl和F.