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    Low-k dielectric material
    3.
    发明申请
    Low-k dielectric material 审中-公开
    低k电介质材料

    公开(公告)号：US20070063188A1

    公开(公告)日：2007-03-22

    申请号：US10552737

    申请日：2004-04-13

    申请人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    发明人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    IPC分类号： H01L51/00 ,  C07F7/12

    CPC分类号： C07F7/12 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76801

    摘要： The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

    摘要翻译： 本发明涉及适用于集成电路和其他类似应用的电介质的薄膜及其生产方法。 特别地，本发明涉及包含至少部分交联的硅氧烷结构的薄膜，所述硅氧烷结构可通过一种或多种通式为R 1 -R 2 - 其中X 1是离去基团，R 2是具有（X 1）3个 3至16个碳原子的芳基，具有5至18个碳原子的芳基或具有7至16个碳原子的多环烷基，R 1是R 2的取代基， 选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基，以及具有5或6个碳原子的芳族基团，每个所述基团是任选的 取代，Cl和F.

    Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
    4.
    发明申请
    Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications 审中-公开
    用于形成集成电路应用的混合有机 - 无机介电材料的材料和方法

    公开(公告)号：US20060131753A1

    公开(公告)日：2006-06-22

    申请号：US11341638

    申请日：2006-01-30

    申请人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

    发明人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

    IPC分类号： H01L23/48

    CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

    摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，电介质是直接光刻图案化的杂化有机 - 无机材料。

    Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
    5.
    发明申请
    Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications 有权
    聚（有机硅氧烷）材料和用于集成电路应用的混合有机 - 无机电介质的方法

    公开(公告)号：US20070077779A1

    公开(公告)日：2007-04-05

    申请号：US11606941

    申请日：2006-12-01

    申请人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

    发明人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

    摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

    摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。