发明申请
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US10783940申请日： 2004-02-20
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公开(公告)号： US20050032371A1公开(公告)日： 2005-02-10
- 发明人: Ju-Jin An , Soo-Woong Lee
- 申请人： Ju-Jin An , Soo-Woong Lee
- 优先权： KR2003-11110 20030221
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/033 ; H01L21/306 ; H01L21/3213 ; H01L21/8242 ; G11C16/06 ; G11C11/34 ; H01L21/302 ; H01L21/461
摘要：
A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.
公开/授权文献
- US07297638B2 Method for manufacturing a semiconductor device 公开/授权日：2007-11-20
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