- 专利标题: Metal film semiconductor device and a method for forming the same
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申请号: US10945992申请日: 2004-09-22
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公开(公告)号: US20050035458A1公开(公告)日: 2005-02-17
- 发明人: Jong-Myeong Lee , In-Sun Park , Jong-Sik Chun
- 申请人: Jong-Myeong Lee , In-Sun Park , Jong-Sik Chun
- 优先权: KR2002-55970 20020914
- 主分类号: C23C16/20
- IPC分类号: C23C16/20 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L23/48
摘要:
A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.