发明申请
- 专利标题: GROUP III NITRIDE LED WITH SILICON CARBIDE SUBSTRATE
- 专利标题(中): III类氮化硅LED,带有碳化硅基板
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申请号: US10948363申请日: 2004-09-23
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公开(公告)号: US20050040426A1公开(公告)日: 2005-02-24
- 发明人: John Edmond , Kathleen Doverspike , Hua-shuang Kong , Michael Bergmann
- 申请人: John Edmond , Kathleen Doverspike , Hua-shuang Kong , Michael Bergmann
- 主分类号: H01L33/06
- IPC分类号: H01L33/06 ; H01L33/32 ; H01S5/323 ; H01S5/343 ; H01L29/15 ; H01L31/0312
摘要:
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.
公开/授权文献
- US07071490B2 Group III nitride LED with silicon carbide substrate 公开/授权日:2006-07-04