发明申请
- 专利标题: Electrostatic RF MEMS switches
- 专利标题(中): 静电RF MEMS开关
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申请号: US10951612申请日: 2004-09-29
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公开(公告)号: US20050040486A1公开(公告)日: 2005-02-24
- 发明人: In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
- 申请人: In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
- 申请人地址: KR Suwon-city
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-city
- 优先权: KR2002-49319 20020820
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; H01H57/00 ; H01H59/00 ; H01L29/417 ; H01L41/09 ; H01P1/12 ; H01L21/76
摘要:
A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.
公开/授权文献
- US07122942B2 Electrostatic RF MEMS switches 公开/授权日:2006-10-17