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51 条记录 (耗时 0.037 秒)

    Electrostatic RF MEMS switches
    1.
    发明授权
    Electrostatic RF MEMS switches 有权
    静电RF MEMS开关

    公开(公告)号：US07122942B2

    公开(公告)日：2006-10-17

    申请号：US10951612

    申请日：2004-09-29

    申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    IPC分类号： H01L41/08

    CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

    Electrostatic RF MEMS switches
    2.
    发明申请
    Electrostatic RF MEMS switches 有权
    静电RF MEMS开关

    公开(公告)号：US20050040486A1

    公开(公告)日：2005-02-24

    申请号：US10951612

    申请日：2004-09-29

    申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    IPC分类号： B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L29/417 ,  H01L41/09 ,  H01P1/12 ,  H01L21/76

    CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

    Magnetron
    6.
    发明申请
    Magnetron 有权
    磁控管

    公开(公告)号：US20060138965A1

    公开(公告)日：2006-06-29

    申请号：US11303986

    申请日：2005-12-19

    申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

    发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

    IPC分类号： H01J25/50

    CPC分类号： H01J25/50

    摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.

    摘要翻译： 提供在太赫兹频带中产生高频能量的磁控管。 磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。

    Method of manufacturing a monolithic duplexer
    7.
    发明授权
    Method of manufacturing a monolithic duplexer 有权
    制造单片双工器的方法

    公开(公告)号：US08720023B2

    公开(公告)日：2014-05-13

    申请号：US12647188

    申请日：2009-12-24

    申请人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

    IPC分类号： H03H9/15 ,  H03H3/007

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

    摘要： A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

    摘要翻译： 公开了一种用于制造超小型高性能单片双工器的方法。 该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极，以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器，其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR（膜体声共振）; 以及将封装基板接合在所述基板上，所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。

    RF nanoswitch
    8.
    发明授权
    RF nanoswitch 有权
    射频纳米开关

    公开(公告)号：US07816662B2

    公开(公告)日：2010-10-19

    申请号：US12619393

    申请日：2009-11-16

    申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

    发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

    IPC分类号： H01L29/06

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01H1/0094 ,  Y10S977/708

    摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

    摘要翻译： RF纳米开关可以减少射频信号的损耗。 RF纳米开关包括连接到驱动电源的一个端子的第一电极单元，连接到驱动电源的另一个端子的第二电极和选择性地与第一电极单元和 第二电极，取决于是否从驱动电源施加电力。

    Duplexer fabricated with monolithic FBAR and isolation part and a method thereof
    9.
    发明申请
    Duplexer fabricated with monolithic FBAR and isolation part and a method thereof 有权
    用单片FBAR和隔离部分制造的双工器及其方法

    公开(公告)号：US20050134401A1

    公开(公告)日：2005-06-23

    申请号：US10989403

    申请日：2004-11-17

    申请人： In-sang Song ,  Byeoung-ju Ha ,  Yun-kwon Park ,  Kuang-woo Nam ,  Dong-ha Shim

    发明人： In-sang Song ,  Byeoung-ju Ha ,  Yun-kwon Park ,  Kuang-woo Nam ,  Dong-ha Shim

    IPC分类号： B81B3/00 ,  B81C1/00 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/311 ,  H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/70

    CPC分类号： H03H9/173 ,  H03H9/0571 ,  H03H9/564 ,  H03H9/706 ,  Y10T29/42

    摘要： A duplexer having a filter and an isolation part which are integrally formed including a substrate, a transmitter filter integrated on the substrate to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.

    摘要翻译： 一种具有滤波器和隔离部分的双工器，其一体形成包括基板，集成在基板上的发射器滤波器，仅在用于传输的频带中传递信号;集成在基板上的接收滤波器，以仅在频带中传递信号 以及与发射机滤波器和接收机滤波器中的任一个整体形成的隔离部分，以将通过发射机滤波器和接收机滤波器的信号彼此隔离。 由于隔离部分与发射器滤波器和接收器滤波器中的任一个整体形成，所以可以通过简化的处理将双工器制造成小尺寸。

    RF NANOSWITCH
    10.
    发明申请
    RF NANOSWITCH 有权

    公开(公告)号：US20100059346A1

    公开(公告)日：2010-03-11

    申请号：US12619393

    申请日：2009-11-16

    申请人： Dong-ha SHIM ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

    发明人： Dong-ha SHIM ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

    IPC分类号： H01H57/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01H1/0094 ,  Y10S977/708

    摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

    摘要翻译： RF纳米开关可以减少射频信号的损耗。 RF纳米开关包括连接到驱动电源的一个端子的第一电极单元，连接到驱动电源的另一个端子的第二电极和选择性地与第一电极单元和 第二电极，取决于是否从驱动电源施加电力。