公开(公告)号：US07122942B2

公开(公告)日：2006-10-17

申请号：US10951612

申请日：2004-09-29

申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC分类号： H01L41/08

CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

公开(公告)号：US20050040486A1

公开(公告)日：2005-02-24

申请号：US10951612

申请日：2004-09-29

申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC分类号： B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L29/417 ,  H01L41/09 ,  H01P1/12 ,  H01L21/76

CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

公开(公告)号：US06989664B2

公开(公告)日：2006-01-24

申请号：US10408779

申请日：2003-04-08

申请人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

发明人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

IPC分类号： G01R31/00 ,  G01R29/24 ,  G01R27/26

CPC分类号： G01R21/00 ,  G01R1/06772

摘要： An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.

公开(公告)号：US07439825B2

公开(公告)日：2008-10-21

申请号：US11448707

申请日：2006-06-08

申请人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-chul Yun

发明人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-chul Yun

IPC分类号： H03H9/56 ,  H03H9/54

CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

摘要翻译： 一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。 集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。 第一和第二压电层由相同的材料形成。 因此，可以使在各种频带中工作的集成滤波器紧凑。

公开(公告)号：US20070024396A1

公开(公告)日：2007-02-01

申请号：US11448707

申请日：2006-06-08

申请人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-Chul Yun

发明人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-Chul Yun

IPC分类号： H03H9/56

CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

摘要翻译： 一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。 集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。 第一和第二压电层由相同的材料形成。 因此，可以使在各种频带中工作的集成滤波器紧凑。

公开(公告)号：US07274147B2

公开(公告)日：2007-09-25

申请号：US11303986

申请日：2005-12-19

申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

IPC分类号： H03B9/10

CPC分类号： H01J25/50

摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.

摘要翻译： 提供在太赫兹频带中产生高频能量的磁控管。 磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。

公开(公告)号：US20060109065A1

公开(公告)日：2006-05-25

申请号：US11262889

申请日：2005-11-01

申请人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

发明人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

IPC分类号： H03H9/70

CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

摘要翻译： 公开了一种超小型高性能单片双工器。 单片双工器包括基板，形成在基板的上表面上的第一区域中的透射端滤光器，形成在基板的上表面上的第二区域中的接收端滤光器，粘合在基板上的封装基板 在封装状态下将发送端滤波器和接收端滤波器封装在基板的上表面上的区域，以及形成在封装基板的一个表面上并与发送端滤波器连接的移相器 接收端滤波器分别用于截取发送端滤波器与接收端滤波器之间的信号流入。

公开(公告)号：US20060139842A1

公开(公告)日：2006-06-29

申请号：US11252590

申请日：2005-10-19

申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Seok-chul Yun ,  In-sang Song

IPC分类号： H01H47/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01H1/0094 ,  Y10S977/708

摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

公开(公告)号：US20060138965A1

公开(公告)日：2006-06-29

申请号：US11303986

申请日：2005-12-19

申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

IPC分类号： H01J25/50

CPC分类号： H01J25/50

摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.

摘要翻译： 提供在太赫兹频带中产生高频能量的磁控管。 磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。

公开(公告)号：US08720023B2

公开(公告)日：2014-05-13

申请号：US12647188

申请日：2009-12-24

申请人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

发明人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

IPC分类号： H03H9/15 ,  H03H3/007

CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

摘要： A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

摘要翻译： 公开了一种用于制造超小型高性能单片双工器的方法。 该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极，以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器，其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR（膜体声共振）; 以及将封装基板接合在所述基板上，所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。