Invention Application
US20050045965A1 Device having multiple silicide types and a method for its fabrication
有权
具有多种硅化物类型的器件及其制造方法
- Patent Title: Device having multiple silicide types and a method for its fabrication
- Patent Title (中): 具有多种硅化物类型的器件及其制造方法
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Application No.: US10831021Application Date: 2004-04-23
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Publication No.: US20050045965A1Publication Date: 2005-03-03
- Inventor: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chuan-Yi Lin , Chenming Hu
- Applicant: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chuan-Yi Lin , Chenming Hu
- Applicant Address: TW Hsin Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin Chu
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3205 ; H01L21/336 ; H01L21/768 ; H01L21/8238 ; H01L27/092 ; H01L29/43 ; H01L29/45 ; H01L29/49 ; H01L29/78 ; H01L29/786
Abstract:
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.
Public/Granted literature
- US07112483B2 Method for forming a device having multiple silicide types Public/Granted day:2006-09-26
Information query
IPC分类:
