Invention Application
US20050048791A1 Selective etch process for making a semiconductor device having a high-k gate dielectric
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用于制造具有高k栅极电介质的半导体器件的选择性蚀刻工艺
- Patent Title: Selective etch process for making a semiconductor device having a high-k gate dielectric
- Patent Title (中): 用于制造具有高k栅极电介质的半导体器件的选择性蚀刻工艺
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Application No.: US10652546Application Date: 2003-08-28
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Publication No.: US20050048791A1Publication Date: 2005-03-03
- Inventor: Justin Brask , Uday Shah , Mark Doczy , Jack Kavalieros , Robert Chau , Robert Turkot , Matthew Metz
- Applicant: Justin Brask , Uday Shah , Mark Doczy , Jack Kavalieros , Robert Chau , Robert Turkot , Matthew Metz
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/311 ; H01L21/302 ; H01L21/461
Abstract:
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.
Public/Granted literature
- US07037845B2 Selective etch process for making a semiconductor device having a high-k gate dielectric Public/Granted day:2006-05-02
Information query
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