发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10958887申请日： 2004-10-05
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公开(公告)号： US20050051772A1公开(公告)日： 2005-03-10
- 发明人: Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
- 申请人： Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP11-078715 19990323
- 主分类号： G02F1/1362
- IPC分类号： G02F1/1362 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/32 ; H01L29/786 ; H01L29/08 ; H01L31/036 ; H01L29/15
摘要：
To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
公开/授权文献
- US07132687B2 Semiconductor device and method of manufacturing the same 公开/授权日：2006-11-07
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