发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10910574申请日： 2004-08-04
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公开(公告)号： US20050051855A1公开(公告)日： 2005-03-10
- 发明人: Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
- 申请人： Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
- 优先权： JP2003-312077 20030904
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L21/28 ; H01L21/314 ; H01L21/3205 ; H01L21/8234 ; H01L21/8238 ; H01L21/8247 ; H01L23/52 ; H01L27/04 ; H01L27/088 ; H01L27/115 ; H01L29/417 ; H01L29/51 ; H01L29/76 ; H01L29/78 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
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