发明申请
US20050057964A1 MEMORY WITH CHARGE STORAGE LOCATIONS AND ADJACENT GATE STRUCTURES
有权
具有充电储存位置和相似门结构的存储器
- 专利标题: MEMORY WITH CHARGE STORAGE LOCATIONS AND ADJACENT GATE STRUCTURES
- 专利标题(中): 具有充电储存位置和相似门结构的存储器
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申请号: US10443908申请日: 2003-05-22
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公开(公告)号: US20050057964A1公开(公告)日: 2005-03-17
- 发明人: Leo Mathew , Robert Steimle , Ramachandran Muralidhar
- 申请人: Leo Mathew , Robert Steimle , Ramachandran Muralidhar
- 专利权人: Motorola Inc.
- 当前专利权人: Motorola Inc.
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04 ; H01L21/28 ; H01L21/336 ; H01L29/788 ; H01L29/792
摘要:
A memory having gate structures adjacent opposing sidewalls of a semiconductor structure including a channel region and a plurality of charge storage locations between the gate structures and the opposing sidewalls. The channel region is located between two current terminal regions, which in one example serve as the source/drain regions. A memory cell can be implemented in an array of memory cells wherein one gate structure is coupled to one word line and the other gate structure is coupled to another word line. In one example, each cell includes four charge storage locations, each for storing one bit of data.