发明申请
- 专利标题： Polymer, resist composition and patterning process
- 专利标题（中）： 聚合物，抗蚀剂组合物和图案化工艺
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申请号： US10936753申请日： 2004-09-09
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公开(公告)号： US20050058938A1公开(公告)日： 2005-03-17
- 发明人: Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
- 申请人： Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
- 优先权： JP2003-320659 20030912
- 主分类号： G03C1/76
- IPC分类号： G03C1/76 ; G03F7/039
摘要：
A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
公开/授权文献
- US07601479B2 Polymer, resist composition and patterning process 公开/授权日：2009-10-13
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