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公开(公告)号：US20050058938A1
公开(公告)日：2005-03-17
申请号：US10936753
申请日：2004-09-09
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R 1，R 3，R 4和R 7为氢或甲基，R 2为酸不稳定基团，R 5和R 6是氢或羟基，R 8是内酯结构基团，其Mw为1,000-50,000。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。
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2.发明授权Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation 有权聚合物，抗蚀剂组合物和图案化工艺，新型四氢呋喃化合物及其制备公开(公告)号：US06794111B2
公开(公告)日：2004-09-21
申请号：US10126877
申请日：2002-04-22
申请人： Tsunehiro Nishi , Takeshi Kinsho , Seiichiro Tachibana , Takeru Watanabe , Koji Hasegawa , Tomohiro Kobayashi
发明人： Tsunehiro Nishi , Takeshi Kinsho , Seiichiro Tachibana , Takeru Watanabe , Koji Hasegawa , Tomohiro Kobayashi
IPC分类号： G03C1492
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or alkyl, or R1 and R2, and R3 and R4 taken together may form a ring with each pair being alkylene, and k is 0 or 1 and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 包含式（1-1）或（1-2）的重复单元的聚合物，其中R 1，R 2，R 3和R 4是H或烷基，或R 1和R 2 R 3和R 4一起可以形成一个环，每一对是亚烷基，并且k是0或1，并且具有1,000-500,000的Mw是新的。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。
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公开(公告)号：US07601479B2
公开(公告)日：2009-10-13
申请号：US10936753
申请日：2004-09-09
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , C08F224/00
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R1，R3，R4和R7是氢或甲基，R2是酸不稳定基团，R5和R6是氢或羟基，R8是内酯结构基团， 提供Mw为1,000-50,000的Mw。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。
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公开(公告)号：US07727704B2
公开(公告)日：2010-06-01
申请号：US11773706
申请日：2007-07-05
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US07691561B2
公开(公告)日：2010-04-06
申请号：US11773656
申请日：2007-07-05
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US06667145B1
公开(公告)日：2003-12-23
申请号：US09694369
申请日：2000-10-24
申请人： Tsunehiro Nishi , Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tomohiro Kobayashi , Jun Hatakeyama
发明人： Tsunehiro Nishi , Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tomohiro Kobayashi , Jun Hatakeyama
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.
摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。
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公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
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公开(公告)号：US20070148594A1
公开(公告)日：2007-06-28
申请号：US11645751
申请日：2006-12-27
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译： 提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％ （2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9， 和R 11是H或CH 3，Y是亚甲基或O，R 2是CO 2 R 2， 当Y为O时，当Y为亚甲基且R 2为H或CO 2 R 10时，SUP> 10 > 10是C 1 -C 15烷基，其可以被O，R 5和R 6分开， / SUP>是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。 包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。
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9.发明申请公开(公告)号：US20060160023A1
公开(公告)日：2006-07-20
申请号：US11373925
申请日：2006-03-13
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.
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公开(公告)号：US06605678B2
公开(公告)日：2003-08-12
申请号：US10307996
申请日：2002-12-03
IPC分类号： C08F12400
CPC分类号： G03F7/0395 , C08F32/08 , G03F7/0045
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
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