发明申请
US20050063208A1 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process
失效
使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
- 专利标题： Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process
- 专利标题（中）： 使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
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申请号： US10840803申请日： 2004-05-07
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公开(公告)号： US20050063208A1公开(公告)日： 2005-03-24
- 发明人: Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
- 申请人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR03-66011 20030923
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; G11C11/42 ; G11C16/04 ; H01L21/28 ; H01L21/336 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L29/792
摘要：
There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.