发明申请
US20050064670A1 Depletion drain-extended MOS transistors and methods for making the same
有权
消耗漏极扩展MOS晶体管及其制造方法
- 专利标题： Depletion drain-extended MOS transistors and methods for making the same
- 专利标题（中）： 消耗漏极扩展MOS晶体管及其制造方法
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申请号： US10669111申请日： 2003-09-23
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公开(公告)号： US20050064670A1公开(公告)日： 2005-03-24
- 发明人: Shanjen Pan , James Todd , Sameer Pendharkar , Tsutomu Kubota , Pinghai Hao
- 申请人： Shanjen Pan , James Todd , Sameer Pendharkar , Tsutomu Kubota , Pinghai Hao
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/78
摘要：
Depletion drain-extended MOS transistor devices and fabrication methods for making the same are provided, in which a compensated channel region is provided with p and n type dopants to facilitate depletion operation at Vgs=0, and an adjust region is implanted in the substrate proximate the channel side end of the thick gate dielectric structure for improved breakdown voltage rating. The compensated channel region is formed by overlapping implants for an n-well and a p-well, and the adjust region is formed using a Vt adjust implant with a mask exposing the adjust region.