发明申请
- 专利标题： Processing method and semiconductor manufacturing method
- 专利标题（中）： 加工方法和半导体制造方法
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申请号： US10916414申请日： 2004-08-12
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公开(公告)号： US20050069815A1公开(公告)日： 2005-03-31
- 发明人: Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Masami Watase
- 申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Masami Watase
- 优先权： JP2003-292973 20030813
- 主分类号： B23K26/18
- IPC分类号： B23K26/18 ; B23K26/00 ; B23K26/02 ; B23K101/40 ; G03F7/00 ; H01L21/00 ; H01L21/027 ; H01L21/302 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; H01L23/544
摘要：
A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.
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