发明申请
- 专利标题: Thin germanium oxynitride gate dielectric for germanium-based devices
- 专利标题(中): 用于锗基器件的薄氮氧化锗栅极电介质
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申请号: US10672631申请日: 2003-09-27
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公开(公告)号: US20050070122A1公开(公告)日: 2005-03-31
- 发明人: Evgeni Gousev , Huiling Shang , Christopher D'Emic , Paul Kozlowski
- 申请人: Evgeni Gousev , Huiling Shang , Christopher D'Emic , Paul Kozlowski
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L21/318 ; H01L29/51 ; H01L21/469
摘要:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.