发明申请
- 专利标题： System for the preferential removal of silicon oxide
- 专利标题（中）： 优先去除氧化硅的系统
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申请号： US10660687申请日： 2003-09-11
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公开(公告)号： US20050072524A1公开(公告)日： 2005-04-07
- 发明人: Brian Mueller , Jeffrey Chamberlain , David Schroeder
- 申请人： Brian Mueller , Jeffrey Chamberlain , David Schroeder
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 主分类号： B24B37/00
- IPC分类号： B24B37/00 ; C09G1/02 ; C09K3/14 ; H01L21/304 ; H01L21/306 ; H01L21/3105 ; C23F1/00
摘要：
A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.
公开/授权文献
- US07238618B2 System for the preferential removal of silicon oxide 公开/授权日：2007-07-03
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