发明申请
- 专利标题： Contact structure of semiconductor device and method of forming the same
- 专利标题（中）： 半导体器件的接触结构及其形成方法
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申请号： US10915538申请日： 2004-08-11
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公开(公告)号： US20050074969A1公开(公告)日： 2005-04-07
- 发明人: Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
- 申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR2003-68332 20031001
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L21/20 ; H01L21/265 ; H01L21/28 ; H01L21/283 ; H01L21/285 ; H01L21/316 ; H01L21/318 ; H01L21/768 ; H01L21/82 ; H01L21/8238 ; H01L23/48 ; H01L23/52 ; H01L27/04 ; H01L29/08 ; H01L29/78
摘要：
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
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