发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10981608申请日： 2004-11-05
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公开(公告)号： US20050082539A1公开(公告)日： 2005-04-21
- 发明人: Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
- 申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd. a Japan corporation
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd. a Japan corporation
- 优先权： JP2000-230401 20000731; JP2000-301389 20000929; JP2000-301390 20000929
- 主分类号： H01L21/77
- IPC分类号： H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L29/786 ; H01L29/04
摘要：
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
公开/授权文献
- US07173283B2 Semiconductor device and method of manufacturing the same 公开/授权日：2007-02-06
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