-
公开(公告)号：US08278160B2
公开(公告)日：2012-10-02
申请号：US13396751
申请日：2012-02-15
IPC分类号： H01L21/302
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US08134157B2
公开(公告)日：2012-03-13
申请号：US12878221
申请日：2010-09-09
IPC分类号： H01L33/00
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US07511303B2
公开(公告)日：2009-03-31
申请号：US11670460
申请日：2007-02-02
IPC分类号： H01L27/14
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US20050082539A1
公开(公告)日：2005-04-21
申请号：US10981608
申请日：2004-11-05
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US06707068B2
公开(公告)日：2004-03-16
申请号：US10456608
申请日：2003-06-09
IPC分类号： H01L2904
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
-
公开(公告)号：US08659025B2
公开(公告)日：2014-02-25
申请号：US13613215
申请日：2012-09-13
IPC分类号： H01L27/15
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US06828586B2
公开(公告)日：2004-12-07
申请号：US10793031
申请日：2004-03-05
IPC分类号： H01L2904
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gale electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 大风电极具有层压结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US20110001140A1
公开(公告)日：2011-01-06
申请号：US12878221
申请日：2010-09-09
IPC分类号： H01L29/739
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US07800115B2
公开(公告)日：2010-09-21
申请号：US12406140
申请日：2009-03-18
IPC分类号： H01L33/00
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
-
公开(公告)号：US20130001561A1
公开(公告)日：2013-01-03
申请号：US13613215
申请日：2012-09-13
IPC分类号： H01L29/786
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
-
-
-
-
-
-
-
-
-
搜索结果
5368 条记录 (耗时 0.03 秒)
