发明申请
US20050085031A1 Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
审中-公开
通过用于IC互连覆盖层的离子和无电反应形成的非均相活化层
- 专利标题： Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
- 专利标题（中）： 通过用于IC互连覆盖层的离子和无电反应形成的非均相活化层
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申请号： US10967099申请日： 2004-10-15
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公开(公告)号： US20050085031A1公开(公告)日： 2005-04-21
- 发明人: Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
- 申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： C23C18/18
- IPC分类号： C23C18/18 ; C23C18/50 ; H01L21/285 ; H01L21/288 ; H01L21/768 ; H01L21/8238
摘要：
Embodiments of the invention generally provide compositions of activation-alloy solutions, methods to deposit activation-alloys and electronic devices including activation-alloys and capping layers. In one embodiment, a method for depositing a capping layer for a semiconductor device is provided which includes exposing a conductive layer on a substrate surface to an activation-alloy solution, forming an activation-alloy layer on the conductive layer using the activation-alloy solution, and depositing the capping layer on the activation-alloy layer using an electroless deposition solution.