发明申请
US20050090109A1 CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
失效
使用有机磺酸作为氧化剂的铜，钨，钛，多晶硅和其它基材的CMP方法
- 专利标题： CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
- 专利标题（中）： 使用有机磺酸作为氧化剂的铜，钨，钛，多晶硅和其它基材的CMP方法
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申请号： US10690623申请日： 2003-10-23
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公开(公告)号： US20050090109A1公开(公告)日： 2005-04-28
- 发明人: Melvin Carter , Robert Small , Xiaowei Shang , Donald Frey
- 申请人： Melvin Carter , Robert Small , Xiaowei Shang , Donald Frey
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C11D7/34 ; C11D11/00 ; H01L21/02 ; H01L21/306 ; H01L21/321 ; H01L21/302 ; H01L21/461
摘要：
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.
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